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yshit

木虫 (小有名气)

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专业: 零件加工制造

[交流] 反应磁控溅射相关文献已有3人参与

两篇2005年Thin Solid Films，一篇2000年Surface and Coatings Technology
Sproul, W.D., D.J. Christie and D.C. Carter, Control of reactive sputtering processes. Thin Solid Films, 2005. 491(1–2): p. 1-17.
1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2. Flow control of the reactive gas . . . . . . .. . . . . . . . . . . . . . 2
3. Partial pressure control of the reactive gas . . . . . . . . . . . . . . . . . . . . . . 3
4. Comparison of mass flow and partial pressure controlled hysteresis curves .. . . . . . 6
5. Power for reactive sputtering of insulating films . .. . . . . . . . . . . . . . . . 9
6. Reactive gas activation and distribution . . . . . . . . . . . . . . . . 12
7. Other approaches to reactive sputtering . . . . . . . . . . . . . . . . . . 13
8. Dual magnetron reactive co-sputtering . . . . . . . . . . . . . . . . . . . 13
9. Two-gas reactive sputtering . . . . . . . . . . . . . . . . . . . . . . . . . . 13
10. Small area reactive sputtering . . . . . . . . . . . . . . . . . . . 15

Musil, J., et al., Reactive magnetron sputtering of thin films: present status and trends. Thin Solid Films, 2005. 475(1–2): p. 208-218.
This paper gives a critical review of the present state of the knowledge in the field of dc reactive magnetron sputtering of compound films.It analyses (i) the hysteresis effect and the methods of its elimination, (ii) problem of stability of reactive sputtering and (iii) deposition of transparent oxides in the transition mode of sputtering. It shows the conditions under which oxides are reactively sputtered with high deposition rates aD oxide achieving up to approximately 77% of that of a pure metal aD Me , i.e. a D oxide/a D Mec0.77. A special attention is devoted to the elimination of arcing in sputtering of insulating films using pulsed dual magnetron or sputtering of oxides from a substoichiometric target. Also, the ion bombardment of films growing on insulating or unbiased substrates in dc pulsed magnetron sputtering is discussed in detail. As an example, a new possibility to form superhard single-phase films based on solid solutions using dc reactive magnetron sputtering is shown. At the end, future trends in dc reactive magnetron sputtering are outlined.

Safi, I., Recent aspects concerning DC reactive magnetron sputtering of thin films: a review. Surface and Coatings Technology, 2000. 127(2–3): p. 203-218.
In this paper, attention is paid to DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the instability in the reactive gas pressure, differential poisoning of magnetron cathode, as well as the methods which are used to control the process. These methods include: a. increasing the pumping speed, which requires considerable additional costs; b.increasing the target-to-substrate distance, which requires larger vacuum chambers hence, higher costs. and also results in lower deposition rates; c. obstructing reactive gas flow to the cathode with the resultant reduction of deposition rate and the need for complicated arrangements; d. pulsed reactive gas flow, which requires an extensive amount of process optimisation and a continuous monitoring and adjustment of the process parameters; e. plasma emission monitoring; and f. voltage control, which are inexpensive and have proved to be powerful techniques for monitoring and controlling the reactive sputtering processes, in real time without disturbing the discharge, for the deposition of high-quality films, reproducibly. In addition, arcing and methods to avoid it are reviewed; this includes, arc initiations and their destructive effects e.g. driving the process to become unstable,reducing the target lifetime and creating defects in the sputtered films., time required for arcs to occur, and finally, methods of avoiding arcs. The latter includes the use of unipolar or bipolar pulsing techniques at frequencies in the range 10-70 kHz
The reactive DC-Magnetron Sputtering
介绍了反应磁控溅射的原理，相关溅射参数，以及沉积系统。
Process[ Last edited by yshit on 2013-4-23 at 15:13 ]

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