Helmholtz-Zentrum Dresden-Rossendorf (HZDR) belongs to the Helmholtz Association, which is the Germany's largest scientific research organisation. Technical University of Dresden is one of eleven German universities that have been identified as an “excellence university”.
This year, we are looking for CSC applicants in the following topics:

(1) Atomistic simulations of two-dimensional materials

Two-dimensional (2D) materials like graphene or transition-metal dichalcogenides have recently attracted lots of attention due to their unique properties. However, to fully use the potentials of these materials in applications, many issues, like the role of defects, must be understood.

The group of Dr. Arkady Krasheninnikov (https://www.hzdr.de/db/Cms?pOid=46208&pNid=1388;  https://users.aalto.fi/~ark/)
has worked on atomistic simulations of defects in 2D materials for many years, with many publications in high-impact journals, see https://users.aalto.fi/~ark/publist.html.
In collaboration with several experimental groups, we continue our studies, and we are always on the lookout for young energetic researchers (PhD students) to join our group.

Requirements:
•        Master's degree in solid-state physics or materials science
•        Good knowledge of quantum mechanics and solid state physics
•        Good scripting and programming skills
•        Experience with atomistic simulation codes such as VASP, GPAW, LAMMPS is highly desirable

For further details please contact Dr. Arkady Krasheninnikov at  a.krasheninnikov@hzdr.de.

(2) Defect engineering in SiC for quantum technology

As proposed in the white pape for quantum technology, "Quantum technology is a new field of physics and engineering, which transitions some of the properties of quantum mechanics, especially quantum entanglement, quantum superposition and quantum tunnelling, into practical applications such as quantum computing, quantum sensing, quantum cryptography and quantum simulation". The nitrogen-vacancy (NV) colour centre in diamond is an important atom like defect, which can be functionalized for emergent quantum technologies. Indeed, analogous defects have been proposed for SiC and GaN, which are more advantageous for practical applications. Ion and electron irradiation is the right tool for creating such kind defects in a controllable way.

In this PhD work, we propose the use of ion and electron irradiation to introduce defects in SiC. Flash-lamp annealing (FLA) in the millisecond range or Pulsed laser melting will be used for post processing. You task is to design and organize ion/electron irradiation for SiC and to characterize the structural, optical and magnetic properties of the obtained samples. The aim is to identify the defect types and evaluate their potential for single photon sources.

Requirements:
(1)        Master degree in Physics or related major with knowledge of solid state physics, semiconductor physics
(2)        Fluent speaking and writing in English
(3)        Self-motivated, willing to work in a team

Contact: Email contacts: Dr. Shengqiang Zhou, s.zhou@hzdr.de, Prof. Manfred Helm, m.helm@hzdr,de,
Website: www.hzdr.de, http://www.hzdr.de/db/Cms?pNid=2765

(3) Band gap engineering in Ge via non-equilibrium thermal processing and Sn doping

Development of the next generation of high performance nanoelectronic devices can only be possible if the limitations of the modern Si technology are overcome. One way of achieving smaller scale and better performance is by applying Ge-based materials in the microelectronic technology. Moreover, the proper band gap engineering in Ge via P doping, Sn alloying and strain leads to the direct band gap formation in Ge. This can be realised using ion beam implantation and post-implantation non-equilibrium thermal processing like nanosecond laser annealing or millisecond flash lamp annealing.
You task is to prepare GeSn alloys with direct band gap by ion implantation and millisecond range FLA, to characterize the structural, optical and electrical properties The Ge based FETs and light emitters/detectors operated at room temperature in the near infrared region (1.6 – 2.5 um) are expected to be the final outcome of your work.

Requirements:
(1)        Master degree in Physics or related major with knowledge of solid state physics, semiconductor physics
(2)        Fluent speaking and writing in English
(3)        Self-motivated, willing to work in a team

Contact: Email contacts: Dr. Slawomir Prucnal, s.prucnal@hzdr.de, Prof. Manfred Helm, m.helm@hzdr,de,
Website: www.hzdr.de, http://www.hzdr.de/db/Cms?pNid=2765

(4) Multifunctional Metal/ZnO plasmonics

The recent emergence of zinc oxide has led to the demonstration of optoelectronic devices with many functionalities such as LEDs, subdiffraction imaging, optical magnetism, photoelectrodes, gas sensors, etc. It was shown that the metal nanostructures like Ag or Au nanoparticles incorporated into ZnO thin films enhances significantly the optical response of such system because of their localized surface plasmon resonance in the presence of external light. The conventional fabrication of metal-ZnO plasmonic materials is based on the rapid thermal or furnace annealing process. The long term thermal processing encounters the problem of dopant segregation in ZnO and huge size distribution of plasmonic nanoparticles. In this work, we propose the use of flash-lamp annealing (FLA) in the millisecond range, which is in between the conventional rapid thermal annealing and nanoseconds pulsed laser annealing.

You task is to prepare metal/ZnO plasmonic layers by pulsed laser deposition, to evaluate the influence of ms-range FLA on the size distribution of metal particles, to characterize the structural, optical and electrical properties of fabricated systems and to demonstrate a prototype of photoelectrode for water splitting application.

Requirements:
(1)        Master degree in Physics or related major with knowledge of solid state physics, semiconductor physics
(2)        Fluent speaking and writing in English
(3)        Self-motivated, willing to work in a team

Contact: Email contacts: Dr. Slawomir Prucnal, s.prucnal@hzdr.de, Prof. Manfred Helm, m.helm@hzdr,de,
Website: www.hzdr.de, http://www.hzdr.de/db/Cms?pNid=2765

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