前两天终于收到了评审意见，文章是关于MoS2吸附的。评审人问了GGA计算能带时带隙修正的问题，因为读过的相关论文里关于带隙的部分也都是没有修正的，但是也没说明为什么，文章里就没有用+U、剪刀之类的修正，带隙计算结果1.72eV。想请教一下，该怎么回复才好。
审稿人意见如下：As it is well-known, the bandgap of semiconductor presented by GGA method is underestimated, in Fig. 2, the author gives band diagram of the clean and adsorption configurations of MoS2, is there any corrections performed with respect to band gap? such as Scissors operator, DFT-D, etc. If not, please add some explanations. 返回小木虫查看更多