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2008ÄêÓÚÐÂ¼ÓÆÂ¹úÁ¢´óѧ»ñµÃ²ÄÁÏ¿ÆÑ§Ó빤³ÌÈÙÓþѧʿѧ룬2012Äê»ñµÃÐÂ¼ÓÆÂ¹úÁ¢´óѧ¼¼Êõ¹ÜÀíÈÏÖ¤£¬2013Äê»ñµÃÐÂ¼ÓÆÂ¹úÁ¢´óѧµçÆøÓë¼ÆËã»ú¹¤³Ì²©Ê¿Ñ§Î»£¬·¢±í¹ú¼ÊѧÊõÂÛÎÄ£¯»áÒéÎÄÕ¹²55ƪ£¨IEDM, TED, EDL, APL, AFM, AM, SRs, JMCAµÈ£©¡£
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Research project (1): fabrication and simulation of GaN-based FETspower devices and reliability study.
Research responsibilities:
1)To design and fabricate GaN-based FETs;
2)To study the keyphysical mechanisms for device degradation and reliability in GaN-based FETs;
3)To design, build& use new experimental setups as necessary;
4) To simulate electrical characteristics of GaN-based FETs;
5)Write papers,reports, and present results at international conferences and meetings.
6) Co-supervise master student(s) & lead coordination and interactionswith partners in the project, including overseas/localuniversity and foundry;
Basic salary: ~283,000RMB above
Documents required:
1) Resume, including publication etc;
2) Degree certificate;
If interested, please drop me an email at xkliu@szu.edu.cn;
Research project (2): Materialgrowth of 2D sulfide materials, and device fabrication (FETs).
Research responsibilities:
1)To carry on material growth using CVD or other methods ;
2)To do material characterization using PL, Raman etc.
3)To design and fabricate 2D material FETs;
4)To design, build& use new experimental setups as necessary;
5)To simulateelectrical characteristics of 2D material FETs;
6)Write papers,reports, and present results at international conferences and meetings.
7) Co-supervise master student(s) & lead coordination and interactionswith partners in the project, including overseas/local university andfoundry;
Basic salary: ~283,000RMB above
Documents required:
3) Resume, including publication etc;
4) Degree certificate;
If interested, please drop me an email; xkliu@szu.edu.cn;
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