更新 09/16/2021: Prof. Tan 将在10月初开始正式面试，预计会在10月中左右给各位答复。还没有给Prof. Tan投简历的有意申请者请尽早联系他。

dr. tan chee-keong 将于 2022 年 2 月加入香港科技大学(广州) 功能枢纽先进材料领域。课题组现招收博士生，硕士生，科研助理，博士后，2022 年 9 月入学 (提前入学时间可以商讨)。课题组研究方向为宽禁带半导体材料与器件在电子，光电，光催化等领域的应用。研究内容以新材料发展为主题，专注氧化镓半导体材料的探索与研发，包括材料薄膜外延生长、材料计算模拟、材料制备与表征、异质结构外延生长、器件计算模拟、器件制备与测试等。课题组研究工作会以有机金属化学气相沉积法(mocvd)和材料的第一原理计算为基础，注重理论与实验并列实施方式来探索新材料及工业应用。
       通过香港科技大学广州共享实验平台，tan 课题组将具备世界超一流的实验条件，拥有材料外延生长、材料制备与表征、器件制备与测试等能力。tan 教授将置入价值千万以上的世界第一台石英构建的三英寸双反应炉氧化镓mocvd。其他材料外延生长先进设备也包括激光分子束外延 (laser mbe) 和等离子体增强化学气相化学 (pecvd) 等。在计算方面，tan 课题组也将配备世界广泛使用的材料和器件模拟软件，供课题组成员使用。由于新材料探索研发涉及多个学科领域，tan 课题组初期计划招收三名不同背景的博士生，以互补方式来培养学生综合能力。另外，tan 课题组计划招收二至三名硕士生，一至二名科研助理，和一至二名博士后。对半导体材料与器件尤其是新材料研发有兴趣的同学欢迎随时联系 dr. tan 以获取更多相关信息。优先考虑有硕士学位的博士生申请者，能力突出的本科生也会予以考虑。      
       专业背景要求：电子电气，化学，物理，材料，应用物理，机械等。
       有意向的申请者请将简历和成绩单发送至 prof. tan 邮箱 (cheekeongtan@ust.hk)


        dr. tan chee-keong will be joining advanced materials thrust area in the function hub of hkust(guangzhou) around february 2022. tan group is looking for a number of phd students, research assistants and postdoctoral associates to join by september 2022 (earlier admission dates are negotiable). research field will be focused on the wide band gap semiconductor materials and devices for various applications including electronics, optoelectronics and photocatalysis. new material development will be designated as the group's research theme, focusing on gallium oxide semiconductor material exploration and development. research activities will include thin film and heterostructure epitaxial growth, material and device simulations, fabrications and characterizations. mocvd growth and first principles calculations will be utilized as the group's research basis, prioritizing the parallel implementation of theory and experiment to explore new materials and to integrate with industry.
       through the centralized facility method at hkust (guangzhou), tan group will possess world's class equipment for experimental research in new materials development. specifically, a world's first 3-inch quartz-built dual-chamber gallium oxide mocvd configured by prof. tan will be installed at hkust (guangzhou). laser mbe, and pecvd as well as many other equipment will also be installed to fulfill research needs at hkust (guangzhou). on the aspect of modeling and simulations, tan group will be equipped with widely used software for materials and devices research, allowing graduate students and others to use them. since new materials development is cross-disciplinary research, tan group plans to recruit three phd students with different background in order to make up one and another's weaknesses and strengths. tan group also plans to recruit two to three master students, one to two research assistants and one to two postdoctoral associates. for those who are interested in semiconductor materials and devices especially in new materials development, please feel free to contact dr. tan for more information. phd applicants with master background will be given priority consideration, but undergraduate students with extraordinary capabilities will also be given exceptional consideration.
       background requirement: major in electrical / electronic engineering, chemical engineering, physics, materials science, applied physics or mechanical engineering.
       simultaneously, prospective applicants are encouraged to send their cv/resume and academic transcripts to prof. tan's email (cheekeongtan@ust.hk).

[ last edited by lxl_cqu on 2021-9-12 at 09:27 ]

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