Special Issue "2D Semiconducting Materials for Device Applications"

Nanomaterials is an international, peer-reviewed, open access journal published monthly online by MDPI.
Journal Rank: JCR - Q1 (Physics, Applied) / CiteScore - Q1 (General Chemical Engineering)
Impact Factor: 5.076 (2020) ; 5-Year Impact Factor: 5.346 (2020)

Dear Colleagues,
We would like to invite you to submit your work to this Special Issue on “2D Semiconducting Materials for Device Applications”. In 2004, Geim et al. successfully used tape to separate the graphite layer, that is, the mechanical exfoliation method was used to separate graphene, which opened up the world of two-dimensional materials. Graphene is an atomically thin film, and its structure is carbon atoms arranged in a hexagonal honeycomb shape. Its advantages include near-transparency, no light absorption, and good flexibility. In terms of electrical properties, it has extremely high electron mobility and extremely low resistivity. However, the conduction band and valence band are symmetrical to the Dirac point. The intersection of the conduction band and the valence band is exactly the Fermi surface, which makes graphene a zero-gap material. Therefore, graphene is defined as a semimetallic material. Generally, graphene has many advantages in electrical properties because of its special band structure, but it also limits the application of logic switching circuits. Subsequently, in order to solve the limitations of graphene in applications, scientists began to find alternative two-dimensional materials, such as hexagonal boron nitride, black phosphorus, and transition metal dichalcogenides (TMDCs). The molecular formula of transition metal dichalcogenides in two-dimensional materials is MX2 ((M = Mo, W, Re, V, Nb), (X = S, Se, Te)), including MoS2, WS2, MoSe2, WSe2, and so on. These have excellent performance in optical, electrical, chemical, and mechanical properties, which makes them particularly attractive. For example, MoS2 has an adjustable energy gap. Monolayer MoS2 has a direct bandgap with 1.8 eV. In other words, MoS2 solves the shortcomings of graphene, which makes two-dimensional materials applicable to optoelectronic devices. Furthermore, WS2 is an excellent high-temperature thermoelectric material. Moreover, the edge-sites of MoS2, MoSe2, WS2, and WSe2 show excellent catalytic and electrochemical activities. After discovering the above advantages, more and more scientists began to invest in research on two-dimensional materials, which has also made it a new generation of electronic and optical devices in the future. This Special Issue of the journal Nanomaterials on “2D Semiconducting Materials for Device Applications” aims to cover recent advances in two-dimensional application technologies.
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