The department, Semiconductor Materials led by Dr. Shengqiang Zhou, focuses on the synthesis and modification of semiconductor materials using ion implantation, flash lamp annealing and pulsed laser melting for microelectronics, optoelectronics and quantum ?techno?logies. The institute belongs to the Helmholtz Association, which is the Germany's largest scientific research organisation. Our students generally register at TU Dresden, which is one of eleven “excellence university” in Germany.
We are looking for PhD students / visiting PhD students / visiting scholars supported by CSC in the following directions.
(1)        2D materials for optoelectronics and spintronics: For many 2D materials, controllable doping is still not yet solved. The ion implantation followed by thermal annealing is the most established doping technology commonly used in Si-based nanoelectronics. The development of the implantation and annealing schema for the doping of 2D materials is the main goal of current proposal and will allow to modify the conductivity (e.g. n-type or p-type doping) or valley polarization. You will use ion beam for the doping or modification of interesting 2D materials. The characterization methods include temperature dependent photoluminescence and Raman as well magnetic/magneto-transport measurements.
(2)        Preparation of B20 silicides and germanides: B20-type transitional metal mono-silicides (TM-Si) have attracted great attentions due recently discovered or predicted new physics e.g. Skyrmions, topological Hall effect as well as unconventional chiral Fermions. We will prepare the transition metal silicides in a different way by using flash lamp or pulsed laser melting. The deposit transition metal thin films will react with Si or Ge within milli- or nano-second. You task is to perform the pulsed laser/flash lamp annealing and characterize the structural, magnetic and magneto-transport properties of the obtained samples.
(3)        Tailoring oxide quantum materials by ions: Inter-relations among charge, spin, orbital and lattice parameters are largely demonstrated in multi-functional oxide materials which exhibit a variety of exotic properties. In particular, tilting a delicate energy balance in lattice interactions and kinetics, achieved by temperature, pressure or chemical control, may result in exotic phenomena in these systems. However, fine-tailoring such interactions has proven difficult. In this context, defect engineering by ion irradiation, which can introduce strain and electronic disorder, has emerged as a powerful technique to fine tune inaccessible complex phases of oxide thin films. In this work, we aim at the modulation of the magnetic, electrical and ferroic properties of oxide quantum materials and their heterostructures.
(4)        Color centers in semiconductors for quantum technology: Quantum technology is a new field of physics and engineering. The nitrogen-vacancy (NV) colour centre in diamond is an important atom like defect, which can be functionalized for emergent quantum technologies. Ion and electron irradiation is the right tool for creating such kind defects in a controllable way. In this PhD work, we propose the use of ion and electron irradiation to introduce defects in Si and / or 2D materials. Flash-lamp annealing (FLA) in the millisecond range or Pulsed laser melting will be used for post processing. You task is to characterize the structural, optical properties of the obtained samples. The aim is to utilize those color centers for photonics.
Requirements:
(1)        Master degree in Physics or related major with knowledge of solid state physics, semiconductor physics, magnetism
(2)        Fluent speaking and writing in English
(3)        Self-motivated, willing to work in a team

Work Place: Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany       
Earliest Start: Mar.-Oct. 2021, Post-doc can start from anytime.       
Address for application: Prof. Manfred Helm and/or Dr. Shengqiang Zhou,
P.O. Box 510119, 01314 Dresden, Germany
Email contacts: Prof. Manfred Helm,  返回小木虫查看更多