The second claim to the title of the article and its conclusions concern the declaration of the properties of the compound obtained. The author is called the Mg2Si semiconductor compound, but no evidence is given. Only references to the literature and to the correspondence of the structure. However, in their study found the conditions of strong oxidation of the compounds obtained. There is no attempt to establish whether the residual oxygen concentration affects the conductivity and Hall effect of the grown films.



I believe that in this form, without additional temperature measurements of conductivity and the Hall effect, it is impossible to recommend an article for printing.

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