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guoj5292
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2Â¥2016-03-08 19:57:22
yinianyici
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3Â¥2016-03-08 21:07:30
yinianyici
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4Â¥2016-03-08 21:15:38
igzotft
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1. 1st step---metallization on AlN ceramic substrate. You can have Cu sheets or plates dir bonded on AlN susbstra by DBC (direct bond copper) or AMB(active metal brazing) process. 2. 2nd step----SiC chip bonded on the metallized AlN substrate. SiC chip is able to joined on the Cu sheet through wire bonding or soldering process with active-metal containing filler material. . |

5Â¥2016-03-10 17:15:18
igzotft
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yinianyici: ½ð±Ò+5, ¡ï¡ï¡ïºÜÓаïÖú, Does this method satisfy the high temperature(1200 C) condition? 2016-03-11 16:39:31
¸Ðл²ÎÓ룬ӦÖúÖ¸Êý +1
yinianyici: ½ð±Ò+5, ¡ï¡ï¡ïºÜÓаïÖú, Does this method satisfy the high temperature(1200 C) condition? 2016-03-11 16:39:31
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1. 1st step--Bonding copper sheet or sheet with AlN ceramic substrate by DBC or AMB process. 2. 2nd step--Bonding SiC chip with Cu metallizated AlN susbstrate through soldering or wire bonding process. |

6Â¥2016-03-10 17:25:08
¸Ðл²ÎÓ룬ӦÖúÖ¸Êý +1
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7Â¥2016-03-11 09:35:21
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8Â¥2016-03-11 16:55:30














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