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ÎÒµÄms½¨Ä£ Si6.cif²¿·ÖÊä³öÊÇ£º data_Si6xy _audit_creation_date 2011-09-08 _audit_creation_method 'Materials Studio' _symmetry_space_group_name_H-M 'P1' _symmetry_Int_Tables_number 1 _symmetry_cell_setting triclinic loop_ _symmetry_equiv_pos_as_xyz x,y,z _cell_length_a 15.0000 _cell_length_b 15.0000 _cell_length_c 3.8407 _cell_angle_alpha 90.0000 _cell_angle_beta 90.0000 _cell_angle_gamma 90.0000 loop_ _atom_site_label _atom_site_type_symbol _atom_site_fract_x _atom_site_fract_y _atom_site_fract_z _atom_site_U_iso_or_equiv _atom_site_adp_type _atom_site_occupancy Si1 Si 0.61468 0.50103 0.70324 0.00000 Uiso 1.00 Si2 Si 0.43366 0.37302 0.20332 0.00000 Uiso 1.00 Si3 Si 0.43366 0.62903 0.20332 0.00000 Uiso 1.00 Si4 Si 0.34314 0.50103 0.20332 0.00000 Uiso 1.00 Si5 Si 0.52417 0.37302 0.70324 0.00000 Uiso 1.00 Si6 Si 0.52417 0.62903 0.70324 0.00000 Uiso 1.00 H7 H 0.67395 0.50103 0.37585 0.00000 Uiso 1.00 H8 H 0.67395 0.50103 1.03063 0.00000 Uiso 1.00 H9 H 0.37438 0.28920 0.20334 0.00000 Uiso 1.00 H10 H 0.37438 0.71285 0.20334 0.00000 Uiso 1.00 H11 H 0.28387 0.50103 0.53071 0.00000 Uiso 1.00 H12 H 0.28387 0.50103 -0.12407 0.00000 Uiso 1.00 H13 H 0.58344 0.28920 0.70323 0.00000 Uiso 1.00 H14 H 0.58344 0.71285 0.70323 0.00000 Uiso 1.00 ÔÚСľ³æÉÏ¿´Á˹ØÓÚabinit ½¨Ä£µÄ´ó²¿·ÖÌû×Ó£¬ºÃÏñ¶¼²»Ì«ÊʺÏÎÒµÄÇé¿ö¡£²»ÖªµÀÕâÖÖÇé¿öÏ£¬ÈçºÎ½¨Ä££¿£¿£¿£¿ £¿£¿£¿£¿£¿£¿£¿£¿£¿£¿£¿£¿£¿ Ö»ÒªDefinition of the unit cell ²¿·Ö¾Í¿ÉÒÔÁË¡£ |
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ÎÒȷʵÓùýÕ⼸¸ö²ÎÊýÉèÖÃÁË£¬µ«ÊDz»¸øÁ¦Ñ½£¬ÎÒ°ÑÎÒµÄINPÌùÉÏÀ´°É£¬¿´¿´ÊÇʲôÇé¿ö£¿£¿ ndtset 2 #Dataset 1 : usual self-consistent calculation kptopt1 1 # Option for the automatic generation of k points, # taking into account the symmetry nshiftk1 4 shiftk1 0.5 0.5 0.5 # These shifts will be the same for all grids 0.5 0.0 0.0 0.0 0.5 0.0 0.0 0.0 0.5 ngkpt1 10 10 10 prtden1 1 # Print the density, for use by dataset 2 toldfe1 1.0d-12 #Dataset 2 : the band structure iscf2 -2 getden2 -1 kptopt2 -3 nband2 16 ndivk2 1 1 16 # 10, 12 and 17 divisions of the 3 segments, delimited # by 4 points. kptbounds2 0.5 0.0 0.0 # L point 0.0 0.0 0.0 # Gamma point 0.0 0.5 0.5 # X point 1.0 1.0 1.0 # Gamma point in another cell. tolwfr2 1.0d-12 enunit2 1 # Will output the eigenenergies in eV #Definition of the unit cell chkprim 0 acell 28.345890 28.345890 7.257870 # the primitive AB supercell(2 2 2) a= 11.61992783 Bohr angdeg 90 90 90 #spgroup 227 #rprim #0.0 0.5 0.5 #0.5 0.0 0.5 #0.5 0.5 0.0 #Definition of the atom types ntypat 2 # There is two types of atoms znucl 14 1 # The keyword "znucl" refers to the atomic number of the # possible type(s) of atom. The pseudopotential(s) # mentioned in the "files" file must correspond #Definition of the atoms natom 14 # There are 14 atoms in the 2*2*2 supercell typat 1 1 1 1 1 1 2 2 2 2 2 2 2 2 # xred # This keyword indicate that the location of the atoms # will follow, one triplet of number for each atom 0.61468 0.50103 0.70324 0.43366 0.37302 0.20332 0.43366 0.62903 0.20332 0.34314 0.50103 0.20332 0.52417 0.37302 0.70324 0.52417 0.62903 0.70324 0.67395 0.50103 0.37585 0.67395 0.50103 1.03063 0.37438 0.28920 0.20334 0.37438 0.71285 0.20334 0.28387 0.50103 0.53071 0.28387 0.50103 -0.12407 0.58344 0.28920 0.70323 0.58344 0.71285 0.70323 #Definition of the planewave basis set ecut 10 # Maximal kinetic energy cut-off, in Hartree #Definition of the SCF procedure nstep 100 # Maximal number of SCF cycles toldfe 1.0d-6 # Will stop when, twice in a row, the difference # between two consecutive evaluations of total energy # differ by less than toldfe (in Hartree) diemac 12.0 # Although this is not mandatory, it is worth to # precondition the SCF cycle. The model dielectric # function used as the standard preconditioner # is described in the "dielng" input variable section. # Here, we follow the prescription for bulk silicon. |
7Â¥2011-09-11 23:11:58
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