| 查看: 1017 | 回复: 4 | ||||
| 本帖产生 1 个 博学EPI ，点击这里进行查看 | ||||
[交流]
求SCI检索记录
|
||||
|
https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1 Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904 求上文的SCI检索记录 在线等，谢谢！ |
回复此楼» 猜你喜欢
博士招生
已经有5人回复
-
夜，静悄悄的
已经有8人回复
-
国自科送审了吗
已经有8人回复
-
收到国自然专家邀请后几年才会有本子送过来评
已经有5人回复
-
研究生做的很差，你们会让毕业吗？
已经有6人回复
-
26年博士申请自荐-电催化
已经有5人回复
-
2026博士或科研助理转27年博士
已经有5人回复
-
26年申博自荐-计算机视觉
已经有4人回复
» 本主题相关价值贴推荐，对您同样有帮助:
- RMIT University (澳大利亚皇家墨尔本理工大学) 信息检索研究组招收PHD
已经有0人回复
- SCI投稿过程总结、投稿状态解析、拒稿后对策及接受后期相关问答
已经有142人回复
- 已发中文核心3篇，SCI 3篇的研三硕士求博导带走
已经有68人回复
- 求SCI检索记录
已经有3人回复
- 求SCI检索记录
已经有1人回复
- 我阅读科研文献的一些做法 （感觉前面发的不全，看得人不多）
已经有54人回复
» 抢金币啦！回帖就可以得到:
-
香港城市大学 数据科学系+能源与环境学院 李堂华 课题组诚招全奖博士/博士后/研究助理
+3/192
-
东南大学废弃碳资源利用团队（杰青/海优团队）27级博士研究生和科研助理招生
+1/127
-
山东大学深地储能系统工程课题组常年招聘优秀博士后研究人员
+1/90
-
太行山徒步之凌水河（一）
+1/79
-
山东征女友，坐标济南
+1/70
-
双一流高校-南京林业大学-化学工程学院-国家海外优青团队招2026级博士（5月15号截止）
+1/33
-
智合健物课题组2026年博士生招生(5月6日—2026年5月13日)
+1/23
-
南京邮电大学李巍教授招收2026博士生（5月12日前有效）
+1/19
-
南京邮电大学李巍教授招收2026博士生（5月12日前有效）
+1/18
-
香港大学化学系刘俊治课题组招聘博士后
+1/15
-
大连理工大学张硕课题组2026年秋季博士生额外招生（补招1人，有机合成/糖化学方向）
+1/14
-
港科大广州 - 量子计算全奖PhD招生
+1/11
-
又是一年基金申报，焦虑，某些学术大佬能不能少点干预
+1/10
-
【硕士生补录】澳科大诚招2026年秋季药剂学硕士研究生1-2名
+1/9
-
天津医科大学基础医学院基础医学院2026级博士招生
+1/7
-
招收2026年秋季入学新能源材料方向博士生
+1/6
-
注册小木虫周年大礼包领取不了
+1/5
-
南京大学医学院医学数字孪生方向博士后招聘
+1/2
-
浙江农林大学 林业工程/木材科学与技术方向拟招录一名2026级博士
+1/2
-
南京大学医学院附属鼓楼医院院士团队招聘博士后、科研助理
+1/1
xdkevin(金币+1, 博学EPI+1): 谢谢！ 2011-03-05 15:47:31
|
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire 作者: Wang, Q; Gong, YP; Zhang, JF, et al. 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: 2009 被引频次: 1 下文就是引用APPLIED PHYSICS LETTERS的论文。 标题: The investigation of the visible photoluminescence in AlN films deposited by sputtering 作者: Chen D, Li W, Yan X, et al.来源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 卷: 4 期: 7 页: 960-964 出版年: JUL 2010 来源ISI Web of Knowledge |
2楼2011-03-04 12:58:37
zhaohaixing
荣誉版主 (著名写手)
-
专家经验: +6 - 博学EPI: 142
- 应助: 14 (小学生)
- 贵宾: 1.609
- 金币: 22013.1
- 帖子: 1952
- 在线: 3135.5小时
- 虫号: 979078
xdkevin(金币+1): 谢谢 2011-03-05 15:47:39
|
Web of Science® – 现在可以同时检索会议录文献 注意 << 返回结果列表 第 1 条记录 (共 1 条记录) Web of Science® 中的记录 Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ 更多选项 作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: OCT 19 2009 被引频次: 1 参考文献: 17 引证关系图 摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] 文献类型: Article 语言: English KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER 通讯作者地址: Wang, T (通讯作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England 地址: 1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England 电子邮件地址: t.wang@sheffield.ac.uk 基金资助致谢: 基金资助机构 授权号 UK Engineering and Physical Sciences Research Council (EPSRC) EP/F03363X/1 EP/C543513/1 [显示基金资助信息] This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. 出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA 学科类别: Physics, Applied IDS 号: 512BU ISSN: 0003-6951 DOI: 10.1063/1.3253416 |
3楼2011-03-04 13:10:28
4楼2011-03-04 13:30:49
xdkevin(金币+23): 太感谢了！ 2011-03-05 15:47:52
|
FN ISI Export Format VR 1.0 PT J AU Wang, Q Gong, YP Zhang, JF Bai, J Ranalli, F Wang, T AF Wang, Q. Gong, Y. P. Zhang, J. F. Bai, J. Ranalli, F. Wang, T. TI Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire SO APPLIED PHYSICS LETTERS LA English DT Article ID ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER AB It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] C1 [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England. RP Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England. EM t.wang@sheffield.ac.uk FU UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1] FX This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. CR AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205 BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925 BAI J, 2006, J APPL PHYS, V99, ARTN 023513 BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146 CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905 EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74 KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634 OGILVY H, 2005, OPT EXPRESS, V13, P9465 PERTON SJ, 1997, GAN RELATED MAT, V2, P291 SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286 SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457 TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061 TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258 WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906 WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126 YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106 YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135 NR 17 TC 1 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA SN 0003-6951 J9 APPL PHYS LETT JI Appl. Phys. Lett. PD OCT 19 PY 2009 VL 95 IS 16 AR 161904 DI 10.1063/1.3253416 PG 3 SC Physics, Applied GA 512BU UT ISI:000271218200017 |
5楼2011-03-05 14:24:26