| 查看: 910 | 回复: 4 | ||||
| 本帖产生 1 个 博学EPI ，点击这里进行查看 | ||||
[交流]
求SCI检索记录
|
||||
|
https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1 Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904 求上文的SCI检索记录 在线等，谢谢！ |
回复此楼» 猜你喜欢
交叉科学部支持青年基金，对三无青椒是个机会吗？
已经有3人回复
-
国家级人才课题组招收2026年入学博士
已经有5人回复
-
Fe3O4@SiO2合成
已经有6人回复
-
青年基金C终止
已经有4人回复
-
青椒八年已不青，大家都被折磨成啥样了？
已经有7人回复
-
为什么nbs上溴 没有产物点出现呢
已经有10人回复
-
救命帖
已经有11人回复
-
招博士
已经有5人回复
-
26申博求博导推荐-遥感图像处理方向
已经有4人回复
-
限项规定
已经有7人回复
» 本主题相关价值贴推荐，对您同样有帮助:
- RMIT University (澳大利亚皇家墨尔本理工大学) 信息检索研究组招收PHD
已经有0人回复
- SCI投稿过程总结、投稿状态解析、拒稿后对策及接受后期相关问答
已经有142人回复
- 已发中文核心3篇，SCI 3篇的研三硕士求博导带走
已经有68人回复
- 求SCI检索记录
已经有3人回复
- 求SCI检索记录
已经有1人回复
- 我阅读科研文献的一些做法 （感觉前面发的不全，看得人不多）
已经有54人回复
» 抢金币啦！回帖就可以得到:
-
邀您投稿 Polymers 特刊
+1/478
-
东北石油大学三亚海洋油气研究院|地学硕士|地质资源与地质工程、地质学、地质工程等
+1/169
-
限广州，征女友
+2/104
-
【2026/2027 哈工大计算机类博士招生】
+1/78
-
深圳大学张雷教授课题组诚聘博士后
+1/74
-
关于本子打包
+1/70
-
征婚
+1/64
-
自驾淄博回四川遂宁过年，寻找小伙伴一起
+1/61
-
西交利物浦大学黄彪院士招收26年全奖博士生1名（工业智能方向）
+1/29
-
中山大学农业与生物技术学院周潇峰课题组诚聘微生物/植物病理学方向科研助理
+1/28
-
英国埃克塞特大学联合培养博士,访问学者, 博后依托申请
+1/8
-
中山大学柔性电子学院黄维院士团队诚招柔性可穿戴电子方向博士生（2026年9月入学）
+1/5
-
论文投稿散金祈愿-电机学报
+2/4
-
福建师范大学柔性电子学院 院士团队招2026级博士 光电器件、发光传感忆阻器
+1/3
-
中国科学技术大学 招特任副研究员 有机-钙钛矿方向
+1/3
-
哈工深教授招收电路设计/建模/加工制备专业博士、博士后
+1/3
-
中南民族大学-国家级领军人才团队超支化聚合物方向2026年博士研究生招生
+1/2
-
【博士后/科研助理招聘-北京理工大学-集成电路与电子学院-国家杰青团队】
+1/2
-
浙江大学 “分子智造”课题组 诚聘 博士后及科研助理
+1/2
-
南开大学齐迹课题组诚聘分子生物学、免疫学、有机分子合成相关方向的博士后和研究生
+1/1
xdkevin(金币+1, 博学EPI+1): 谢谢！ 2011-03-05 15:47:31
|
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire 作者: Wang, Q; Gong, YP; Zhang, JF, et al. 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: 2009 被引频次: 1 下文就是引用APPLIED PHYSICS LETTERS的论文。 标题: The investigation of the visible photoluminescence in AlN films deposited by sputtering 作者: Chen D, Li W, Yan X, et al.来源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 卷: 4 期: 7 页: 960-964 出版年: JUL 2010 来源ISI Web of Knowledge |
2楼2011-03-04 12:58:37
zhaohaixing
荣誉版主 (著名写手)
-
专家经验: +6 - 博学EPI: 142
- 应助: 14 (小学生)
- 贵宾: 1.609
- 金币: 21882.6
- 帖子: 1952
- 在线: 3114.4小时
- 虫号: 979078
xdkevin(金币+1): 谢谢 2011-03-05 15:47:39
|
Web of Science® – 现在可以同时检索会议录文献 注意 << 返回结果列表 第 1 条记录 (共 1 条记录) Web of Science® 中的记录 Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ 更多选项 作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: OCT 19 2009 被引频次: 1 参考文献: 17 引证关系图 摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] 文献类型: Article 语言: English KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER 通讯作者地址: Wang, T (通讯作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England 地址: 1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England 电子邮件地址: t.wang@sheffield.ac.uk 基金资助致谢: 基金资助机构 授权号 UK Engineering and Physical Sciences Research Council (EPSRC) EP/F03363X/1 EP/C543513/1 [显示基金资助信息] This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. 出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA 学科类别: Physics, Applied IDS 号: 512BU ISSN: 0003-6951 DOI: 10.1063/1.3253416 |
3楼2011-03-04 13:10:28
4楼2011-03-04 13:30:49
xdkevin(金币+23): 太感谢了！ 2011-03-05 15:47:52
|
FN ISI Export Format VR 1.0 PT J AU Wang, Q Gong, YP Zhang, JF Bai, J Ranalli, F Wang, T AF Wang, Q. Gong, Y. P. Zhang, J. F. Bai, J. Ranalli, F. Wang, T. TI Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire SO APPLIED PHYSICS LETTERS LA English DT Article ID ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER AB It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] C1 [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England. RP Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England. EM t.wang@sheffield.ac.uk FU UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1] FX This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. CR AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205 BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925 BAI J, 2006, J APPL PHYS, V99, ARTN 023513 BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146 CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905 EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74 KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634 OGILVY H, 2005, OPT EXPRESS, V13, P9465 PERTON SJ, 1997, GAN RELATED MAT, V2, P291 SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286 SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457 TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061 TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258 WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906 WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126 YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106 YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135 NR 17 TC 1 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA SN 0003-6951 J9 APPL PHYS LETT JI Appl. Phys. Lett. PD OCT 19 PY 2009 VL 95 IS 16 AR 161904 DI 10.1063/1.3253416 PG 3 SC Physics, Applied GA 512BU UT ISI:000271218200017 |
5楼2011-03-05 14:24:26