| 查看: 945 | 回复: 4 | ||||
| 本帖产生 1 个 博学EPI ，点击这里进行查看 | ||||
[交流]
求SCI检索记录
|
||||
|
https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1 Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904 求上文的SCI检索记录 在线等，谢谢！ |
回复此楼» 猜你喜欢
国自科面上基金字体
已经有6人回复
-
304求调剂
已经有3人回复
-
304求调剂
已经有6人回复
-
材料与化工一志愿南昌大学327求调剂推荐
已经有8人回复
-
0703 物理化学调剂
已经有5人回复
-
化学工程321分求调剂
已经有7人回复
-
0703化学调剂 290分有科研经历，论文在投
已经有7人回复
-
308求调剂
已经有3人回复
-
本人考085602 化学工程 专硕
已经有10人回复
-
焦虑
已经有9人回复
» 本主题相关价值贴推荐，对您同样有帮助:
- RMIT University (澳大利亚皇家墨尔本理工大学) 信息检索研究组招收PHD
已经有0人回复
- SCI投稿过程总结、投稿状态解析、拒稿后对策及接受后期相关问答
已经有142人回复
- 已发中文核心3篇，SCI 3篇的研三硕士求博导带走
已经有68人回复
- 求SCI检索记录
已经有3人回复
- 求SCI检索记录
已经有1人回复
- 我阅读科研文献的一些做法 （感觉前面发的不全，看得人不多）
已经有54人回复
» 抢金币啦！回帖就可以得到:
-
【技术服务】研究所横向技术开发及服务
+1/99
-
物理学 调剂
+1/84
-
重庆医科大学神经科学中心/病生与生理系诚邀海内外优秀博士加盟博士后队伍（长期）
+1/83
-
招收苏州国家实验室和苏州大学联合培养博士（2026年9月入学）
+1/82
-
华南师范大学（211）博士招生- 电子、自动化、机械、生物学、物理相关专业
+2/48
-
西北工业大学光子学研究团队诚聘博士后！
+2/48
-
深圳理工大学梁国进课题组（成会明院士团队）诚聘科研助理教授、博士后
+1/32
-
中山大学院士团队微纳器件、脑机接口方向博士招生、博后招聘
+1/27
-
北京某研究院生物化学与分子生物学相关专业申请考核制博士招生（春季）
+1/16
-
山东省植物基蛋白技术创新中心课题组联合培养硕士研究生招募启事
+1/13
-
【全奖招生】北师港浸大ESLAS实验室招收密码工程/网络安全/计算机视觉博士/博士后
+1/11
-
华中科技大学管理学院招聘社会用工（科研助理）1名
+1/9
-
西京学院土木水利 2026 级研究生招生相关说明
+1/8
-
教育部长江学者和创新团队发展计划”入选团队招收 材料，化学与化工博士研究生
+1/7
-
青岛科技大学可持续高分子团队 考研招生
+1/7
-
双一流天津工业大学电信学院李鸿强教授招收2026年申请审核制博士3名
+1/6
-
请问为什么我的贴子自动到“已删除的主题”里而没有被发布？
+1/5
-
【第三轮招生】澳科大诚招2026年秋季硕士研究生（3月31日下午18:00截止）
+1/3
-
重庆交通大学山区桥梁及隧道工程国家重点实验室——Smart Concrete Lab招生
+1/2
-
招收环工、环科、化工、应化、化学、生工、生物、材化等相关专业研究生，要求过国家线
+1/1
xdkevin(金币+1, 博学EPI+1): 谢谢！ 2011-03-05 15:47:31
|
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire 作者: Wang, Q; Gong, YP; Zhang, JF, et al. 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: 2009 被引频次: 1 下文就是引用APPLIED PHYSICS LETTERS的论文。 标题: The investigation of the visible photoluminescence in AlN films deposited by sputtering 作者: Chen D, Li W, Yan X, et al.来源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 卷: 4 期: 7 页: 960-964 出版年: JUL 2010 来源ISI Web of Knowledge |
2楼2011-03-04 12:58:37
zhaohaixing
荣誉版主 (著名写手)
-
专家经验: +6 - 博学EPI: 142
- 应助: 14 (小学生)
- 贵宾: 1.609
- 金币: 21928.6
- 帖子: 1952
- 在线: 3126.8小时
- 虫号: 979078
xdkevin(金币+1): 谢谢 2011-03-05 15:47:39
|
Web of Science® – 现在可以同时检索会议录文献 注意 << 返回结果列表 第 1 条记录 (共 1 条记录) Web of Science® 中的记录 Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ 更多选项 作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: OCT 19 2009 被引频次: 1 参考文献: 17 引证关系图 摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] 文献类型: Article 语言: English KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER 通讯作者地址: Wang, T (通讯作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England 地址: 1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England 电子邮件地址: t.wang@sheffield.ac.uk 基金资助致谢: 基金资助机构 授权号 UK Engineering and Physical Sciences Research Council (EPSRC) EP/F03363X/1 EP/C543513/1 [显示基金资助信息] This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. 出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA 学科类别: Physics, Applied IDS 号: 512BU ISSN: 0003-6951 DOI: 10.1063/1.3253416 |
3楼2011-03-04 13:10:28
4楼2011-03-04 13:30:49
xdkevin(金币+23): 太感谢了！ 2011-03-05 15:47:52
|
FN ISI Export Format VR 1.0 PT J AU Wang, Q Gong, YP Zhang, JF Bai, J Ranalli, F Wang, T AF Wang, Q. Gong, Y. P. Zhang, J. F. Bai, J. Ranalli, F. Wang, T. TI Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire SO APPLIED PHYSICS LETTERS LA English DT Article ID ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER AB It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] C1 [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England. RP Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England. EM t.wang@sheffield.ac.uk FU UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1] FX This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. CR AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205 BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925 BAI J, 2006, J APPL PHYS, V99, ARTN 023513 BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146 CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905 EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74 KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634 OGILVY H, 2005, OPT EXPRESS, V13, P9465 PERTON SJ, 1997, GAN RELATED MAT, V2, P291 SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286 SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457 TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061 TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258 WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906 WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126 YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106 YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135 NR 17 TC 1 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA SN 0003-6951 J9 APPL PHYS LETT JI Appl. Phys. Lett. PD OCT 19 PY 2009 VL 95 IS 16 AR 161904 DI 10.1063/1.3253416 PG 3 SC Physics, Applied GA 512BU UT ISI:000271218200017 |
5楼2011-03-05 14:24:26
