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https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1 Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang£¬Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904 ÇóÉÏÎĵÄSCI¼ìË÷¼Ç¼ ÔÚÏߵȣ¬Ð»Ð»£¡ |
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xdkevin(½ð±Ò+1, ²©Ñ§EPI+1): лл£¡ 2011-03-05 15:47:31
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±êÌâ: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire ×÷Õß: Wang, Q; Gong, YP; Zhang, JF, et al. À´Ô´³ö°æÎï: APPLIED PHYSICS LETTERS ¾í: 95 ÆÚ: 16 ÎÄÏ×±àºÅ: 161904 ³ö°æÄê: 2009 ±»ÒýƵ´Î: 1 ÏÂÎľÍÊÇÒýÓÃAPPLIED PHYSICS LETTERSµÄÂÛÎÄ¡£ ±êÌâ: The investigation of the visible photoluminescence in AlN films deposited by sputtering ×÷Õß: Chen D, Li W, Yan X, et al.À´Ô´³ö°æÎï: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS ¾í: 4 ÆÚ: 7 Ò³: 960-964 ³ö°æÄê: JUL 2010 À´Ô´ISI Web of Knowledge |
2Â¥2011-03-04 12:58:37
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xdkevin(½ð±Ò+1): лл 2011-03-05 15:47:39
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Web of Science® ¨C ÏÖÔÚ¿ÉÒÔͬʱ¼ìË÷»áÒé¼ÎÄÏ× ×¢Òâ << ·µ»Ø½á¹ûÁÐ±í µÚ 1 Ìõ¼Ç¼ (¹² 1 Ìõ¼Ç¼) Web of Science® ÖеļǼ Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ ¸ü¶àÑ¡Ïî ×÷Õß: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1 À´Ô´³ö°æÎï: APPLIED PHYSICS LETTERS ¾í: 95 ÆÚ: 16 ÎÄÏ×±àºÅ: 161904 ³ö°æÄê: OCT 19 2009 ±»ÒýƵ´Î: 1 ²Î¿¼ÎÄÏ×: 17 ÒýÖ¤¹ØÏµÍ¼ ÕªÒª: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] ÎÄÏ×ÀàÐÍ: Article ÓïÑÔ: English KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER ͨѶ×÷ÕßµØÖ·: Wang, T (ͨѶ×÷Õß), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England µØÖ·: 1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England µç×ÓÓʼþµØÖ·: t.wang@sheffield.ac.uk »ù½ð×ÊÖúÖÂл: »ù½ð×ÊÖú»ú¹¹ ÊÚȨºÅ UK Engineering and Physical Sciences Research Council (EPSRC) EP/F03363X/1 EP/C543513/1 [ÏÔʾ»ù½ð×ÊÖúÐÅÏ¢] This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. ³ö°æÉÌ: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA ѧ¿ÆÀà±ð: Physics, Applied IDS ºÅ: 512BU ISSN: 0003-6951 DOI: 10.1063/1.3253416 |
3Â¥2011-03-04 13:10:28
4Â¥2011-03-04 13:30:49
parklyn
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xdkevin(½ð±Ò+23): Ì«¸ÐлÁË£¡ 2011-03-05 15:47:52
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FN ISI Export Format VR 1.0 PT J AU Wang, Q Gong, YP Zhang, JF Bai, J Ranalli, F Wang, T AF Wang, Q. Gong, Y. P. Zhang, J. F. Bai, J. Ranalli, F. Wang, T. TI Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire SO APPLIED PHYSICS LETTERS LA English DT Article ID ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER AB It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] C1 [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England. RP Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England. EM t.wang@sheffield.ac.uk FU UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1] FX This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. CR AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205 BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925 BAI J, 2006, J APPL PHYS, V99, ARTN 023513 BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146 CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905 EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74 KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634 OGILVY H, 2005, OPT EXPRESS, V13, P9465 PERTON SJ, 1997, GAN RELATED MAT, V2, P291 SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286 SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457 TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061 TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258 WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906 WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126 YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106 YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135 NR 17 TC 1 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA SN 0003-6951 J9 APPL PHYS LETT JI Appl. Phys. Lett. PD OCT 19 PY 2009 VL 95 IS 16 AR 161904 DI 10.1063/1.3253416 PG 3 SC Physics, Applied GA 512BU UT ISI:000271218200017 |
5Â¥2011-03-05 14:24:26














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