| 查看: 982 | 回复: 4 | ||||
| 本帖产生 1 个 博学EPI ，点击这里进行查看 | ||||
[交流]
求SCI检索记录
|
||||
|
https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1 Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904 求上文的SCI检索记录 在线等，谢谢！ |
回复此楼» 猜你喜欢
315求调剂
已经有15人回复
-
070300化学学硕311分求调剂
已经有9人回复
-
一志愿南昌大学，085600，344分求调剂
已经有7人回复
-
一志愿 江南大学 085602 化工专硕 338分求调剂
已经有13人回复
-
化学0703-一志愿211-338分求调剂
已经有8人回复
-
0703调剂，一志愿天津大学319分
已经有8人回复
-
085602调剂 初试总分335
已经有9人回复
-
336材料与化工085600求调剂
已经有8人回复
-
085600材料与化工301分求调剂院校
已经有6人回复
-
071000生物学调剂
已经有3人回复
» 本主题相关价值贴推荐，对您同样有帮助:
- RMIT University (澳大利亚皇家墨尔本理工大学) 信息检索研究组招收PHD
已经有0人回复
- SCI投稿过程总结、投稿状态解析、拒稿后对策及接受后期相关问答
已经有142人回复
- 已发中文核心3篇，SCI 3篇的研三硕士求博导带走
已经有68人回复
- 求SCI检索记录
已经有3人回复
- 求SCI检索记录
已经有1人回复
- 我阅读科研文献的一些做法 （感觉前面发的不全，看得人不多）
已经有54人回复
» 抢金币啦！回帖就可以得到:
-
南方科技大学新材料重大科技设施研究院 科研助理招聘启事
+5/735
-
谷岩课题组招收调剂同学
+1/187
-
北京石油化工学院【化学工程与技术、材料与化工】调剂招生3名！
+1/85
-
齐鲁工业大学招收轻工、材料、化工、环境类研究生
+1/82
-
【考研调剂】华侨大学发光材料与信息显示研究院接收专硕和学硕调剂
+1/41
-
085404 计算机技术 真诚求老师带走 杭电 336 六级已过
+1/36
-
河南工业大学化学化工学院 2026 年硕士调剂正在进行！
+1/35
-
中国科学院深圳先进院唐永炳研究员团队诚聘电化学/电池方向博士后
+1/35
-
岭南师范学院生物与医药专业（生物技术与工程领域）2026年调剂公告
+1/22
-
台州学院医药化工学院2026年化学/化学工程硕士调剂研究生
+1/21
-
~【西昌学院资源与环境学院硕士招生调剂】~
+1/12
-
武汉工程大学环境科学、生物工程、生物工程与技术方向均接受调剂
+1/8
-
【博士招生】天津理工大学国家杰青王铁课题组招收2026年博士研究生
+1/7
-
齐齐哈尔大学李莉课题组诚招2026级考研调剂生（学硕和专硕）
+1/7
-
中国林科院木材所硕士调剂
+1/6
-
长江师范学院 材料工程 招收调剂学生
+1/5
-
广州双一流大学08代码学硕接受调剂
+1/5
-
南昌大学工程建设学院2026年招聘2名科研助理
+1/4
-
哈尔滨工程大学动力学院赵建辉团队招收2026博士研究生
+1/2
-
【博士招生】广东工业大学国家优青课题组招收2026年博士生（环境/化学/材料/微生物）
+1/2
xdkevin(金币+1, 博学EPI+1): 谢谢！ 2011-03-05 15:47:31
|
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire 作者: Wang, Q; Gong, YP; Zhang, JF, et al. 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: 2009 被引频次: 1 下文就是引用APPLIED PHYSICS LETTERS的论文。 标题: The investigation of the visible photoluminescence in AlN films deposited by sputtering 作者: Chen D, Li W, Yan X, et al.来源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 卷: 4 期: 7 页: 960-964 出版年: JUL 2010 来源ISI Web of Knowledge |
2楼2011-03-04 12:58:37
zhaohaixing
荣誉版主 (著名写手)
-
专家经验: +6 - 博学EPI: 142
- 应助: 14 (小学生)
- 贵宾: 1.609
- 金币: 21971.6
- 帖子: 1952
- 在线: 3131.1小时
- 虫号: 979078
xdkevin(金币+1): 谢谢 2011-03-05 15:47:39
|
Web of Science® – 现在可以同时检索会议录文献 注意 << 返回结果列表 第 1 条记录 (共 1 条记录) Web of Science® 中的记录 Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ 更多选项 作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1 来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: OCT 19 2009 被引频次: 1 参考文献: 17 引证关系图 摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] 文献类型: Article 语言: English KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER 通讯作者地址: Wang, T (通讯作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England 地址: 1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England 电子邮件地址: t.wang@sheffield.ac.uk 基金资助致谢: 基金资助机构 授权号 UK Engineering and Physical Sciences Research Council (EPSRC) EP/F03363X/1 EP/C543513/1 [显示基金资助信息] This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. 出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA 学科类别: Physics, Applied IDS 号: 512BU ISSN: 0003-6951 DOI: 10.1063/1.3253416 |
3楼2011-03-04 13:10:28
4楼2011-03-04 13:30:49
xdkevin(金币+23): 太感谢了！ 2011-03-05 15:47:52
|
FN ISI Export Format VR 1.0 PT J AU Wang, Q Gong, YP Zhang, JF Bai, J Ranalli, F Wang, T AF Wang, Q. Gong, Y. P. Zhang, J. F. Bai, J. Ranalli, F. Wang, T. TI Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire SO APPLIED PHYSICS LETTERS LA English DT Article ID ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER AB It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416] C1 [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England. RP Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England. EM t.wang@sheffield.ac.uk FU UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1] FX This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1. CR AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205 BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925 BAI J, 2006, J APPL PHYS, V99, ARTN 023513 BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146 CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905 EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74 KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634 OGILVY H, 2005, OPT EXPRESS, V13, P9465 PERTON SJ, 1997, GAN RELATED MAT, V2, P291 SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286 SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457 TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061 TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258 WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906 WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126 YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106 YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135 NR 17 TC 1 PU AMER INST PHYSICS PI MELVILLE PA CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA SN 0003-6951 J9 APPL PHYS LETT JI Appl. Phys. Lett. PD OCT 19 PY 2009 VL 95 IS 16 AR 161904 DI 10.1063/1.3253416 PG 3 SC Physics, Applied GA 512BU UT ISI:000271218200017 |
5楼2011-03-05 14:24:26
