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xdkevin(金币+1, 博学EPI+1): 谢谢！ 2011-03-05 15:47:31
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
作者: Wang, Q; Gong, YP; Zhang, JF, et al.
来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16 文献编号: 161904 出版年: 2009
被引频次: 1
下文就是引用APPLIED PHYSICS LETTERS的论文。
标题: The investigation of the visible photoluminescence in AlN films deposited by sputtering
作者: Chen D, Li W, Yan X, et al.来源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 卷: 4 期: 7 页: 960-964 出版年: JUL 2010
来源ISI Web of Knowledge |
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