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xdkevin

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[交流] 求SCI检索记录

https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1

Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904

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1楼 2011-03-04 11:53:30
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zhaohaixing

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xdkevin(金币+1): 谢谢 2011-03-05 15:47:39
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Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
  
Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ        更多选项


作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1  
来源出版物: APPLIED PHYSICS LETTERS    卷: 95    期: 16  文献编号: 161904    出版年: OCT 19 2009   
被引频次: 1     参考文献: 17     引证关系图      
摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416]
文献类型: Article  
语言: English  
KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER  
通讯作者地址: Wang, T (通讯作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England  
地址:
1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England  
电子邮件地址: t.wang@sheffield.ac.uk  
基金资助致谢:
基金资助机构 授权号
UK Engineering and Physical Sciences Research Council (EPSRC)  EP/F03363X/1
EP/C543513/1  

[显示基金资助信息]   

This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1.

出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA  
学科类别: Physics, Applied  
IDS 号: 512BU  
ISSN: 0003-6951  
DOI: 10.1063/1.3253416
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3楼2011-03-04 13:10:28
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ylhttzj

至尊木虫 (知名作家)
xdkevin(金币+1, 博学EPI+1): 谢谢！ 2011-03-05 15:47:31
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
作者: Wang, Q; Gong, YP; Zhang, JF, et al.
来源出版物: APPLIED PHYSICS LETTERS   卷: 95   期: 16   文献编号: 161904   出版年: 2009
被引频次: 1
下文就是引用APPLIED PHYSICS LETTERS的论文。
标题: The investigation of the visible photoluminescence in AlN films deposited by sputtering
作者: Chen D, Li W, Yan X, et al.来源出版物: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS   卷: 4   期: 7   页: 960-964   出版年: JUL 2010

来源ISI Web of Knowledge
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2楼2011-03-04 12:58:37
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xdkevin

金虫 (职业作家)
引用回帖:
Originally posted by ylhttzj at 2011-03-04 12:58:37:
标题: Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
作者: Wang, Q; Gong, YP; Zhang, JF, et al.
来源出版物: APPLI ...

有SCI检索号吗？
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4楼2011-03-04 13:30:49
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parklyn

铁杆木虫 (职业作家)
xdkevin(金币+23): 太感谢了！ 2011-03-05 15:47:52
FN ISI Export Format
VR 1.0
PT  J
AU  Wang, Q
Gong, YP
Zhang, JF
Bai, J
Ranalli, F
Wang, T
AF  Wang, Q.
Gong, Y. P.
Zhang, J. F.
Bai, J.
Ranalli, F.
Wang, T.
TI  Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
SO  APPLIED PHYSICS LETTERS
LA  English
DT  Article
ID  ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER
AB  It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416]
C1  [Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T.] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England.
RP  Wang, T, Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England.
EM  t.wang@sheffield.ac.uk
FU  UK Engineering and Physical Sciences Research Council (EPSRC) [EP/F03363X/1, EP/C543513/1]
FX  This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1.
CR  AMANO H, 1990, JPN J APPL PHYS PT 2, V29, L205
BAI J, 2006, APPL PHYS LETT, V89, ARTN 131925
BAI J, 2006, J APPL PHYS, V99, ARTN 023513
BAI J, 2006, J CRYST GROWTH, V289, P63, DOI 10.1016/j.jcrysgro.2005.10.146
CHEN Z, 2006, APPL PHYS LETT, V89, ARTN 081905
EDGAR JH, 1994, PROPERTIES GROUP 3 N, P74
KATONA TM, 2004, APPL PHYS LETT, V84, P5025, DOI 10.1063/1.1763634
OGILVY H, 2005, OPT EXPRESS, V13, P9465
PERTON SJ, 1997, GAN RELATED MAT, V2, P291
SHATALOV M, 2006, JPN J APPL PHYS 2, V45, L1286, DOI 10.1143/JJAP.45.L1286
SIVAPRAKASAM V, 2004, OPT EXPRESS, V12, P4457
TAKANO T, 2004, APPL PHYS LETT, V84, P3567, DOI 10.1063/1.1737061
TAKANO T, 2004, JPN J APPL PHYS 2, V43, L1258, DOI 10.1143/JJAP.43.L1258
WANG T, 2005, APPL PHYS LETT, V87, ARTN 151906
WANG T, 2006, APPL PHYS LETT, V89, ARTN 081126
YOSHIDA H, 2008, APPL PHYS LETT, V93, ARTN 241106
YOSHIDA H, 2008, NAT PHOTONICS, V2, P551, DOI 10.1038/nphoton.2008.135
NR  17
TC  1
PU  AMER INST PHYSICS
PI  MELVILLE
PA  CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
SN  0003-6951
J9  APPL PHYS LETT
JI  Appl. Phys. Lett.
PD  OCT 19
PY  2009
VL  95
IS  16
AR  161904
DI  10.1063/1.3253416
PG  3
SC  Physics, Applied
GA  512BU


UT  ISI:000271218200017
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5楼2011-03-05 14:24:26
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