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https://apl.aip.org/resource/1/applab/v95/i16/p161904_s1

Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang，Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire, Applied Physics Letters, October 2009, 95:161904

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1楼 2011-03-04 11:53:30

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Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

Library of CAS Tsinghua University Peking University Fudan univ NCL OPAC Shanghai Jiotong Univ       更多选项

作者: Wang Q (Wang, Q.)1, Gong YP (Gong, Y. P.)1, Zhang JF (Zhang, J. F.)1, Bai J (Bai, J.)1, Ranalli F (Ranalli, F.)1, Wang T (Wang, T.)1
来源出版物: APPLIED PHYSICS LETTERS 卷: 95 期: 16  文献编号: 161904 出版年: OCT 19 2009
被引频次: 1    参考文献: 17    引证关系图
摘要: It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified "GaN interlayer" and "multiple porous AlN buffer." The Al0.16Ga0.84N/Al0.05Ga0.95N MQWs have been grown on top of the two kinds of buffers on sapphire. High resolution x-ray diffraction measurements have confirmed that the crystal quality has been massively improved. As a result, an UV stimulated emission at 340 nm has been observed via optical pumping with a low threshold power of similar to 6.6 kW/cm(2) at room temperature. The developed approaches potentially provide a simple way for achieving electrical injection UV (including deep UV) laser. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253416]
文献类型: Article
语言: English
KeyWords Plus: ROOM-TEMPERATURE; ULTRAVIOLET; LASER; DIODE; LAYER
通讯作者地址: Wang, T (通讯作者), Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire England
地址:
1. Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire England
电子邮件地址: t.wang@sheffield.ac.uk
基金资助致谢:
基金资助机构授权号
UK Engineering and Physical Sciences Research Council (EPSRC)  EP/F03363X/1
EP/C543513/1

[显示基金资助信息]

This work is supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through Grant Nos. EP/F03363X/1 and EP/C543513/1.

出版商: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
学科类别: Physics, Applied
IDS 号: 512BU
ISSN: 0003-6951
DOI: 10.1063/1.3253416

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