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ÌìÍâ·ÉÏÉ5388

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ÎÒÃǵõ½µÄ½á¹ûÊÇȱÏÝÊø¸¿¼¤×Ó²úÉú3.366 eV´¦µÄ·¢Éä¡£Ëæ×ÅζȵÄÉý¸ß£¬ÔÚ5.7 meVÈȼ¤»îÄÜ×÷ÓÃÏÂËü»áת»¯Îª×ÔÓɼ¤×Ó¡£
We show that the excitons bound to structural defects lead to the emission of 3.366 eV which transfers to free excitons with thermal activation energy of 5.7 meV as increasing temperature.
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No other crystalline phase is found in the sample, besides of the peak located at 57.66¡ã from silicon substrate.
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Assuming the exciton binding energy is independence of temperature, we can estimate the band gap energy to be the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV´¦µÄ·¢ÉäÔÚ¹âÆ×ÖÐÕ¼Ö÷µ¼µØÎ»£¬ËüµÄÀ´Ô´¹é¸ùÓÚȱÏݼ¤×Ó¸´ºÏ·¢¹â¡£
The excitonic-related emission peak of 3.336 eV dominates the spectra, and is accounted for the recombination of excitons bound to structural defects (DBX).

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[ Last edited by ÌìÍâ·ÉÏÉ5388 on 2011-2-11 at 10:19 ]

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ÌìÍâ·ÉÏÉ5388

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7Â¥2011-02-11 16:07:39
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ÌìÍâ·ÉÏÉ5388(½ð±Ò+2, ·­ÒëEPI+1): 2011-02-11 15:00:21
ÎÒÃǵõ½µÄ½á¹ûÊÇȱÏÝÊø¸¿¼¤×Ó²úÉú3.366 eV´¦µÄ·¢Éä¡£Ëæ×ÅζȵÄÉý¸ß£¬ÔÚ5.7 meVÈȼ¤»îÄÜ×÷ÓÃÏÂËü»áת»¯Îª×ÔÓɼ¤×Ó¡£
We show that defects bound exciton emission at 3.366 eV transfers to free excitons through activation by thermal  energy of 5.7 meV with temperature
increasing.
³ýÁË57.66¡ã´¦µÄ¹è³Äµ×·åÍ⣬ûÓз¢ÏÖÆäËü¾§ÏàµÄ·å¡£
In addition to the peak at 57.66 ¡ã from the silicon substrate, there is no other crystalline phase found in the peak.
¼ÙÉ輤×ÓÊø¸¿ÄܺÍζÈûÓйØÏµ£¬ÎÒÃÇ¿ÉÒÔÈÏΪ´øÏ¶´óСµÈÓÚ×ÔÓɼ¤×ÓÄܺͼ¤×ÓÊø¸¿ÄÜÖ®ºÍ¡£
Assuming the exciton binding energy is independent of temperature, we can think that the band gap energy equals to the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV´¦µÄ·¢ÉäÔÚ¹âÆ×ÖÐÕ¼Ö÷µ¼µØÎ»£¬ËüµÄÀ´Ô´¹é¸ùÓÚȱÏݼ¤×Ó¸´ºÏ·¢¹â¡£
The spectrum is dominated by emission at 3.336 eV  from excitonic recombination defects.
2Â¥2011-02-11 10:54:51
ÒÑÔÄ   »Ø¸´´ËÂ¥   ¹Ø×¢TA ¸øTA·¢ÏûÏ¢ ËÍTAºì»¨ TAµÄ»ØÌû
ÌìÍâ·ÉÏÉ5388(½ð±Ò+2): 2011-02-11 15:00:37
ÎÒÃǵõ½µÄ½á¹ûÊÇȱÏÝÊø¸¿¼¤×Ó²úÉú3.366 eV´¦µÄ·¢Éä¡£Ëæ×ÅζȵÄÉý¸ß£¬ÔÚ5.7 meVÈȼ¤»îÄÜ×÷ÓÃÏÂËü»áת»¯Îª×ÔÓɼ¤×Ó¡£
The result show that defects bound exciton emission at 3.366 eV transfered to free excitons through activation by thermal  energy of 5.7 meV as temperature
increased.
³ýÁË57.66¡ã´¦µÄ¹è³Äµ×·åÍ⣬ûÓз¢ÏÖÆäËü¾§ÏàµÄ·å¡£
Except the peak at 57.66 ¡ã from the silicon substrate, there is no other crystalline phase found in the peak.
¼ÙÉ輤×ÓÊø¸¿ÄܺÍζÈûÓйØÏµ£¬ÎÒÃÇ¿ÉÒÔÈÏΪ´øÏ¶´óСµÈÓÚ×ÔÓɼ¤×ÓÄܺͼ¤×ÓÊø¸¿ÄÜÖ®ºÍ¡£
Assumed that the exciton binding energy was independent of temperature, we could conclude that the band gap energy equals to the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV´¦µÄ·¢ÉäÔÚ¹âÆ×ÖÐÕ¼Ö÷µ¼µØÎ»£¬ËüµÄÀ´Ô´¹é¸ùÓÚȱÏݼ¤×Ó¸´ºÏ·¢¹â¡£
The spectrum is dominated by emission at 3.336 eV  ,which is from excitonic recombination defects.
3Â¥2011-02-11 11:27:58
ÒÑÔÄ   »Ø¸´´ËÂ¥   ¹Ø×¢TA ¸øTA·¢ÏûÏ¢ ËÍTAºì»¨ TAµÄ»ØÌû
ÌìÍâ·ÉÏÉ5388(½ð±Ò+2): 2011-02-11 15:00:47
ÎÒÃǵõ½µÄ½á¹ûÊÇȱÏÝÊø¸¿¼¤×Ó²úÉú3.366 eV´¦µÄ·¢Éä¡£Ëæ×ÅζȵÄÉý¸ß£¬ÔÚ5.7 meVÈȼ¤»îÄÜ×÷ÓÃÏÂËü»áת»¯Îª×ÔÓɼ¤×Ó¡£
The results show that defects bound exciton emission at 3.366 eV transfers to free excitons through activation by thermal  energy of 5.7 meV with temperature
increasing.
³ýÁË57.66¡ã´¦µÄ¹è³Äµ×·åÍ⣬ûÓз¢ÏÖÆäËü¾§ÏàµÄ·å¡£
In addition to the peak at 57.66 ¡ã from the silicon substrate, there is no other crystalline phase found in the peak.
¼ÙÉ輤×ÓÊø¸¿ÄܺÍζÈûÓйØÏµ£¬ÎÒÃÇ¿ÉÒÔÈÏΪ´øÏ¶´óСµÈÓÚ×ÔÓɼ¤×ÓÄܺͼ¤×ÓÊø¸¿ÄÜÖ®ºÍ¡£
Assuming the exciton binding energy is independent of temperature, we can conclude that the band gap energy equals to the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV´¦µÄ·¢ÉäÔÚ¹âÆ×ÖÐÕ¼Ö÷µ¼µØÎ»£¬ËüµÄÀ´Ô´¹é¸ùÓÚȱÏݼ¤×Ó¸´ºÏ·¢¹â¡£
The spectrum is dominated by emission at 3.336 eV£¬which is from excitonic recombination defects.
4Â¥2011-02-11 12:04:56
ÒÑÔÄ   »Ø¸´´ËÂ¥   ¹Ø×¢TA ¸øTA·¢ÏûÏ¢ ËÍTAºì»¨ TAµÄ»ØÌû
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