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本帖产生 1 个翻译EPI ，点击这里进行查看

天外飞仙5388

铜虫 (小有名气)

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[交流] 编辑叫我修改这几个句子！！

我们得到的结果是缺陷束缚激子产生3.366 eV处的发射。随着温度的升高，在5.7 meV热激活能作用下它会转化为自由激子。
We show that the excitons bound to structural defects lead to the emission of 3.366 eV which transfers to free excitons with thermal activation energy of 5.7 meV as increasing temperature.
在样品的（XRD）图谱中，除了57.66°处的硅衬底峰外，没有发现其它晶相的峰。
No other crystalline phase is found in the sample, besides of the peak located at 57.66° from silicon substrate.
假设激子束缚能和温度没有关系，我们可以认为带隙大小等于自由激子能和激子束缚能之和。
Assuming the exciton binding energy is independence of temperature, we can estimate the band gap energy to be the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV处的发射在光谱中占主导地位，它的来源归根于缺陷激子复合发光。
The excitonic-related emission peak of 3.336 eV dominates the spectra, and is accounted for the recombination of excitons bound to structural defects (DBX).

PS: 中文是我要表达的意思，英语翻译有问题。
大家帮忙下，看我这几个句子问题出在哪里？

[ Last edited by 天外飞仙5388 on 2011-2-11 at 10:19 ]

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1楼 2011-02-11 10:16:55

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8814402

至尊木虫 (职业作家)

天外飞仙5388(金币+2, 翻译EPI+1): 2011-02-11 15:00:21

我们得到的结果是缺陷束缚激子产生3.366 eV处的发射。随着温度的升高，在5.7 meV热激活能作用下它会转化为自由激子。
We show that defects bound exciton emission at 3.366 eV transfers to free excitons through activation by thermal energy of 5.7 meV with temperature
increasing.
除了57.66°处的硅衬底峰外，没有发现其它晶相的峰。
In addition to the peak at 57.66 ° from the silicon substrate, there is no other crystalline phase found in the peak.
假设激子束缚能和温度没有关系，我们可以认为带隙大小等于自由激子能和激子束缚能之和。
Assuming the exciton binding energy is independent of temperature, we can think that the band gap energy equals to the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV处的发射在光谱中占主导地位，它的来源归根于缺陷激子复合发光。
The spectrum is dominated by emission at 3.336 eV from excitonic recombination defects.

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2楼2011-02-11 10:54:51

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爱与雨下

荣誉版主 (职业作家)

天外飞仙5388(金币+2): 2011-02-11 15:00:37

我们得到的结果是缺陷束缚激子产生3.366 eV处的发射。随着温度的升高，在5.7 meV热激活能作用下它会转化为自由激子。
The result show that defects bound exciton emission at 3.366 eV transfered to free excitons through activation by thermal energy of 5.7 meV as temperature
increased.
除了57.66°处的硅衬底峰外，没有发现其它晶相的峰。
Except the peak at 57.66 ° from the silicon substrate, there is no other crystalline phase found in the peak.
假设激子束缚能和温度没有关系，我们可以认为带隙大小等于自由激子能和激子束缚能之和。
Assumed that the exciton binding energy was independent of temperature, we could conclude that the band gap energy equals to the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV处的发射在光谱中占主导地位，它的来源归根于缺陷激子复合发光。
The spectrum is dominated by emission at 3.336 eV ,which is from excitonic recombination defects.

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3楼2011-02-11 11:27:58

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至尊木虫 (职业作家)

天外飞仙5388(金币+2): 2011-02-11 15:00:47

我们得到的结果是缺陷束缚激子产生3.366 eV处的发射。随着温度的升高，在5.7 meV热激活能作用下它会转化为自由激子。
The results show that defects bound exciton emission at 3.366 eV transfers to free excitons through activation by thermal energy of 5.7 meV with temperature
increasing.
除了57.66°处的硅衬底峰外，没有发现其它晶相的峰。
In addition to the peak at 57.66 ° from the silicon substrate, there is no other crystalline phase found in the peak.
假设激子束缚能和温度没有关系，我们可以认为带隙大小等于自由激子能和激子束缚能之和。
Assuming the exciton binding energy is independent of temperature, we can conclude that the band gap energy equals to the sum of free excitons transition energy and exciton binding energy at 8 K.
3.336 eV处的发射在光谱中占主导地位，它的来源归根于缺陷激子复合发光。
The spectrum is dominated by emission at 3.336 eV，which is from excitonic recombination defects.

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4楼2011-02-11 12:04:56

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8814402

至尊木虫 (职业作家)

略做修改如上

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5楼2011-02-11 12:05:24

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zerohead

禁虫 (职业作家)

天外飞仙5388(金币+1): 2011-02-11 15:00:53

3.336 eV 处的发射在光谱中占主导地位，它的来源归根于缺陷激子复合发光。

The excitonic-related emission peak at 3.336 eV dominates the spectra. It is accounted for the recombination of excitons bound to structural defects (DBX).

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6楼2011-02-11 12:23:13

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