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huahua33

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[求助] 急急急!找这篇文献的检索号

EI收录的,文章题目:c向提拉法生长的四英寸蓝宝石单晶缺陷研究,英文题目:study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method
第一作者:Peng fang
杂志:人工晶体学报 ISSN:1000-985X
求这篇文章的检索号,急!

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huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助! 2015-12-21 16:22:47
EI:
Accession number:       
20130215884111
3楼2015-12-21 16:19:23
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【答案】应助回帖

感谢参与,应助指数 +1
Accession number:       
20130215884111
        Title:        Study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method
        Authors:         Peng, Fang1, 2 Email author pf23208@163.com; Zhang, Qing-Li1 Email author zql@aiofm.ac.cn; Yang, Hua-Jun1, 2; Wang, Xiao-Fei1, 2; Wang, Di1; Sun, Dun-Lu1; Yin, Shao-Tang1
        Author affiliation:        1 Anhui Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
                2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China
        Corresponding author:         Zhang, Q.-L. (zql@aiofm.ac.cn)
        Source title:        Rengong Jingti Xuebao/Journal of Synthetic Crystals
        Abbreviated source title:        Rengong Jingti Xuebao
        Volume:        41
        Issue:        SUPPL. 1
        Issue date:        August 2012
        Publication year:        2012
        Pages:        143-147
        Language:        Chinese
        ISSN:         1000985X
        CODEN:         RJXUEN
        Document type:        Journal article (JA)
        Publisher:        Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China
        Abstract:        4-inches sapphire single crystal with high quality along the [0001] (c-axis) direction was successfully gown by CZ method. X-ray rocking curve was applied to check the quality of as-grown crystal. The FWHM of rocking curve is 0.00546°, indicating the crystal has good quality. The dislocation and topography were observed by chemical etching method and optical microscopy. And the average dislocation density was calculated to be 6190 cm-2, which is better than other sapphire single crystals grown by CZ method.
        Number of references:        8
        Main heading:         Sapphire
        Controlled terms:         Crystal growth from melt - Dislocations (crystals) - Optical microscopy - Single crystals
        Uncontrolled terms:         As-grown crystal - C-axis direction - Chemical etching - Dislocation densities - High quality - Rocking curves - Sapphire single crystal - X ray rocking curve
        Classification code:         482.2.1 Gems - 741.1 Light/Optics - 933 Solid State Physics
        Database:        Compendex
                Compilation and indexing terms, © 2015 Elsevier Inc.
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