| 查看: 525 | 回复: 2 | ||
| 本帖产生 1 个 ,点击这里进行查看 | ||
[求助]
急急急!找这篇文献的检索号
|
||
|
EI收录的,文章题目:c向提拉法生长的四英寸蓝宝石单晶缺陷研究,英文题目:study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method 第一作者:Peng fang 杂志:人工晶体学报 ISSN:1000-985X 求这篇文章的检索号,急! |
» 猜你喜欢
8月时间戳变的,举个手。玩一下,释放压力
已经有10人回复
求各位大神看下
已经有15人回复
【2027博士申请】纳米药物递送方向
已经有4人回复
面上再次挂了,太难了,躺也躺不了,倦也卷不过,小学校之殇!
已经有29人回复
UV压敏胶开发
已经有7人回复
有没有H口的?有收到消息的吗?
已经有3人回复
十年后又回来了,论文投稿求助
已经有3人回复
纯娱乐,不喜欢勿喷
已经有10人回复
面上提前没消息,有中的吗
已经有18人回复
娱乐
已经有4人回复
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4643 (副教授)
- 贵宾: 46.97
- 金币: 659299
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69573
- 在线: 13476.5小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
感谢参与,应助指数 +1
|
Accession number: 20130215884111 Title: Study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method Authors: Peng, Fang1, 2 Email author pf23208@163.com; Zhang, Qing-Li1 Email author zql@aiofm.ac.cn; Yang, Hua-Jun1, 2; Wang, Xiao-Fei1, 2; Wang, Di1; Sun, Dun-Lu1; Yin, Shao-Tang1 Author affiliation: 1 Anhui Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China 2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China Corresponding author: Zhang, Q.-L. (zql@aiofm.ac.cn) Source title: Rengong Jingti Xuebao/Journal of Synthetic Crystals Abbreviated source title: Rengong Jingti Xuebao Volume: 41 Issue: SUPPL. 1 Issue date: August 2012 Publication year: 2012 Pages: 143-147 Language: Chinese ISSN: 1000985X CODEN: RJXUEN Document type: Journal article (JA) Publisher: Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China Abstract: 4-inches sapphire single crystal with high quality along the [0001] (c-axis) direction was successfully gown by CZ method. X-ray rocking curve was applied to check the quality of as-grown crystal. The FWHM of rocking curve is 0.00546°, indicating the crystal has good quality. The dislocation and topography were observed by chemical etching method and optical microscopy. And the average dislocation density was calculated to be 6190 cm-2, which is better than other sapphire single crystals grown by CZ method. Number of references: 8 Main heading: Sapphire Controlled terms: Crystal growth from melt - Dislocations (crystals) - Optical microscopy - Single crystals Uncontrolled terms: As-grown crystal - C-axis direction - Chemical etching - Dislocation densities - High quality - Rocking curves - Sapphire single crystal - X ray rocking curve Classification code: 482.2.1 Gems - 741.1 Light/Optics - 933 Solid State Physics Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. Full-text and Local Holdings Links |
2楼2015-12-21 16:18:56
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4643 (副教授)
- 贵宾: 46.97
- 金币: 659299
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69573
- 在线: 13476.5小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助! 2015-12-21 16:22:47
huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助! 2015-12-21 16:22:47
|
EI: Accession number: 20130215884111 |
3楼2015-12-21 16:19:23










回复此楼