| 查看: 465 | 回复: 2 | |||
| 本帖产生 1 个 ，点击这里进行查看 | |||
[求助]
急急急！找这篇文献的检索号
|
|||
|
EI收录的，文章题目：c向提拉法生长的四英寸蓝宝石单晶缺陷研究，英文题目：study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method 第一作者：Peng fang 杂志：人工晶体学报 ISSN:1000-985X 求这篇文章的检索号，急！ |
回复此楼» 猜你喜欢
材料工程085601，270求调剂
已经有24人回复
-
085404 293求调剂
已经有3人回复
-
调剂
已经有21人回复
-
复试调剂，一志愿郑州大学材料与化工289分
已经有15人回复
-
08工科求调剂290分
已经有12人回复
-
286求调剂
已经有16人回复
-
材料类284调剂
已经有24人回复
-
考研调剂-材料类-284
已经有14人回复
-
327求调剂
已经有11人回复
-
一志愿985初试354分生物调剂
已经有3人回复
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4642 (副教授)
- 贵宾: 46.97
- 金币: 658610
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69427
- 在线: 13332.3小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
感谢参与，应助指数 +1
|
Accession number: 20130215884111 Title: Study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method Authors: Peng, Fang1, 2 Email author pf23208@163.com; Zhang, Qing-Li1 Email author zql@aiofm.ac.cn; Yang, Hua-Jun1, 2; Wang, Xiao-Fei1, 2; Wang, Di1; Sun, Dun-Lu1; Yin, Shao-Tang1 Author affiliation: 1 Anhui Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China 2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China Corresponding author: Zhang, Q.-L. (zql@aiofm.ac.cn) Source title: Rengong Jingti Xuebao/Journal of Synthetic Crystals Abbreviated source title: Rengong Jingti Xuebao Volume: 41 Issue: SUPPL. 1 Issue date: August 2012 Publication year: 2012 Pages: 143-147 Language: Chinese ISSN: 1000985X CODEN: RJXUEN Document type: Journal article (JA) Publisher: Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China Abstract: 4-inches sapphire single crystal with high quality along the [0001] (c-axis) direction was successfully gown by CZ method. X-ray rocking curve was applied to check the quality of as-grown crystal. The FWHM of rocking curve is 0.00546°, indicating the crystal has good quality. The dislocation and topography were observed by chemical etching method and optical microscopy. And the average dislocation density was calculated to be 6190 cm-2, which is better than other sapphire single crystals grown by CZ method. Number of references: 8 Main heading: Sapphire Controlled terms: Crystal growth from melt - Dislocations (crystals) - Optical microscopy - Single crystals Uncontrolled terms: As-grown crystal - C-axis direction - Chemical etching - Dislocation densities - High quality - Rocking curves - Sapphire single crystal - X ray rocking curve Classification code: 482.2.1 Gems - 741.1 Light/Optics - 933 Solid State Physics Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. Full-text and Local Holdings Links |
2楼2015-12-21 16:18:56
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4642 (副教授)
- 贵宾: 46.97
- 金币: 658610
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69427
- 在线: 13332.3小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助！ 2015-12-21 16:22:47
huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助！ 2015-12-21 16:22:47
|
EI: Accession number: 20130215884111 |
3楼2015-12-21 16:19:23
5