| 查看: 534 | 回复: 2 | |||
| 本帖产生 1 个 ，点击这里进行查看 | |||
[求助]
急急急！找这篇文献的检索号
|
|||
|
EI收录的，文章题目：c向提拉法生长的四英寸蓝宝石单晶缺陷研究，英文题目：study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method 第一作者：Peng fang 杂志：人工晶体学报 ISSN:1000-985X 求这篇文章的检索号，急！ |
回复此楼» 猜你喜欢
综述论文作为代表作会不会影响评审专家的印象分？
已经有12人回复
-
2019年青年基金涵评意见，大家看看几个A，几个B?
已经有4人回复
-
应该是93bebmhtak前后十一个字符比较关键
已经有29人回复
-
奇怪，两个人的filecode固定段从头到尾一模一样
已经有9人回复
-
是这周出结果还是下周出结果？
已经有3人回复
-
小木虫上这么多卖论文的，真有人买论文么？感觉没必要啊
已经有9人回复
-
有时候，自然基金真的不能太认真 （我的申报经验）
已经有4人回复
-
帮忙看看fileCode
已经有13人回复
-
为什么网上很多人说本周 12号出结果
已经有7人回复
-
读博的好处
已经有3人回复
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4643 (副教授)
- 贵宾: 46.97
- 金币: 659407
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69580
- 在线: 13481.3小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
感谢参与，应助指数 +1
|
Accession number: 20130215884111 Title: Study on the defect of 4-inches sapphire single crystal grown along c-axis direction by czochralski method Authors: Peng, Fang1, 2 Email author pf23208@163.com; Zhang, Qing-Li1 Email author zql@aiofm.ac.cn; Yang, Hua-Jun1, 2; Wang, Xiao-Fei1, 2; Wang, Di1; Sun, Dun-Lu1; Yin, Shao-Tang1 Author affiliation: 1 Anhui Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China 2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China Corresponding author: Zhang, Q.-L. (zql@aiofm.ac.cn) Source title: Rengong Jingti Xuebao/Journal of Synthetic Crystals Abbreviated source title: Rengong Jingti Xuebao Volume: 41 Issue: SUPPL. 1 Issue date: August 2012 Publication year: 2012 Pages: 143-147 Language: Chinese ISSN: 1000985X CODEN: RJXUEN Document type: Journal article (JA) Publisher: Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China Abstract: 4-inches sapphire single crystal with high quality along the [0001] (c-axis) direction was successfully gown by CZ method. X-ray rocking curve was applied to check the quality of as-grown crystal. The FWHM of rocking curve is 0.00546°, indicating the crystal has good quality. The dislocation and topography were observed by chemical etching method and optical microscopy. And the average dislocation density was calculated to be 6190 cm-2, which is better than other sapphire single crystals grown by CZ method. Number of references: 8 Main heading: Sapphire Controlled terms: Crystal growth from melt - Dislocations (crystals) - Optical microscopy - Single crystals Uncontrolled terms: As-grown crystal - C-axis direction - Chemical etching - Dislocation densities - High quality - Rocking curves - Sapphire single crystal - X ray rocking curve Classification code: 482.2.1 Gems - 741.1 Light/Optics - 933 Solid State Physics Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. Full-text and Local Holdings Links |
2楼2015-12-21 16:18:56
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4643 (副教授)
- 贵宾: 46.97
- 金币: 659407
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69580
- 在线: 13481.3小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助！ 2015-12-21 16:22:47
huahua33: 金币+50, ★★★★★最佳答案 2015-12-21 16:21:25
sunshan4379: LS-EPI+1, 感谢应助！ 2015-12-21 16:22:47
|
EI: Accession number: 20130215884111 |
3楼2015-12-21 16:19:23
