Fig. 1. Schematic of Ni/n-Si photoanode. (A) Structure of 2-nm Ni-coated n-Si anode (top) and proposed approximate energy band diagram (bottom). The ultrathin Ni/NiOx and the electrolyte form an effective layer interfacing with Si, affording a high built-in potential fs and photovoltage. (B) Structure of 5- to 20-nm Ni-coated n-Si anode (top) and a typical Ni/n-Si Schottky barrier formed between 5- to 20-nm Ni and n-Si, with built-in potential fs and photovoltage lower than the 2-nm Ni/n-Si case in (A).
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