| 查看: 477 | 回复: 2 | |||
| 本帖产生 1 个 翻译EPI ，点击这里进行查看 | |||
[求助]
拿出一半家产,求高手帮我的一段英文润色啊.谢谢
|
|||
|
1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) are sketched in Fig. 1 (a). Fig. 1 (b) shows the AR-H curves for the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C. One can see the AR value drops from 1.0% for the as-deposited sample to about only 0.2% for the annealed one when d =5 nm. However, for d =30 nm, the AR value reaches about 3% for the annealed sample, which is very close to that of the sample in the as-grown state. In contrast, when d =80 nm, the AR value increases from 3.7% for the as-deposited sample to 4.7% for the annealed one, the value of which even exceeds the bulk value. As expected, Figure 1(c) shows the relationship between the AR and the MN thickness for the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas when the film thickness exceeds a critical thickness of 30nm, AR values of the annealed samples are significantly higher than those of the as-deposited samples. Apparently, AR change after annealing shows a significant thickness dependent behavior. 文中有些结构被替换掉了，请见谅 2. the grain size changes little after annealing, so in this case, what causing the abnormal resistivity increase and the resulted AR reduction remains indefinitive. [ Last edited by 柠檬树 on 2013-3-23 at 12:05 ] |
回复此楼» 猜你喜欢
三无产品还有机会吗
已经有3人回复
-
投稿返修后收到这样的回复，还有希望吗
已经有7人回复
-
压汞仪和BET测气凝胶孔隙率
已经有4人回复
-
博士申请都是内定的吗？
已经有14人回复
-
谈谈两天一夜的“延安行”
已经有13人回复
-
氨基封端PDMS和HDI反应快速固化
已经有11人回复
-
之前让一硕士生水了7个发明专利，现在这7个获批发明专利的维护费可从哪儿支出哈？
已经有11人回复
-
论文投稿求助
已经有4人回复
-
Applied Surface Science 这个期刊。有哪位虫友投过的能把word模板发给我参考一下嘛
已经有3人回复
-
投稿精细化工
已经有6人回复
bwshanxi
至尊木虫 (文坛精英)
- 翻译EPI: 4
- 应助: 292 (大学生)
- 金币: 17072.6
- 红花: 18
- 帖子: 15794
- 在线: 878.9小时
- 虫号: 454546
- 注册: 2007-11-09
- 性别: GG
- 专业: 有机分子功能材料化学
【答案】应助回帖
| 结构AlN（1纳米）/ MN（d纳米）/AlN（1纳米）的绘制如图1（a）图1（b）表示退火前和退火后对AR-H的AlN（1纳米）/ MN（d纳米）/AlN（1纳米）薄膜〔d= 5，30，80] 曲线在400℃。可以看到AR值从1.0％下降为沉积的样品大约只有0.2％的退火当d =5纳米时候。然而，当d =30nm时候，在AR值达到退火的样品的约3％，这是非常接近在生长状态的样品。相反，当d =80nm时候，AR的值从3.7％增加为沉积样品退火的1至4.7％，甚至超过大容量值，它的值。正如预期的那样，图1（c）示出的关系之间的AR和MN厚度的AlN/ MN/ AlN成前和退火后，在400℃下值得注意的是，退火后的样品的AR值明显低于那些生长的当d<30nm左右，而当薄膜厚度超过某一临界厚度为30nm时，退火后的样品的AR值显着高于如此沉积的样品。显然，AR变化后退火显示了显着的厚度依赖行为。 |
2楼2013-03-23 12:48:41
hookhans
铁杆木虫 (著名写手)
Farmer
- 翻译EPI: 263
- 应助: 186 (高中生)
- 贵宾: 0.142
- 金币: 9312.5
- 散金: 576
- 红花: 51
- 帖子: 1995
- 在线: 386.1小时
- 虫号: 2260260
- 注册: 2013-01-25
- 专业: 催化化学
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
柠檬树: 金币+30, 翻译EPI+1, ★★★★★最佳答案, 非常有用 非常感谢啊 2013-03-23 16:30:52
柠檬树: 金币+30, 翻译EPI+1, ★★★★★最佳答案, 非常有用 非常感谢啊 2013-03-23 16:30:52
|
1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) and the AR-H curves of the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C are shown in Fig. 1 (a) and Fig. 1 (b), respectively. It can be seen that the AR value drops from 1.0% to 0.2% after annealing the sample with d =5 nm. However, for the sample with d =30 nm, the AR value reaches about 3% after annealing, which is very close to that of the as-grown sample. In contrast, the AR value increases from 3.7% to 4.7% for the sample with d =80 nm after annealing, (the value of) which even exceeds the bulk value. Figure 1(c) shows the relationship between the AR and the MN thickness of the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas the AR values of the annealed samples are significantly higher than those of the as-deposited samples when the film thickness exceeds a critical thickness of 30nm. Apparently, AR change after annealing shows a significant thickness dependent behavior. 2. Since the grain size changes little after annealing, it still remains unclear exactly what causes the increase of the abnormal resistivity and the consequent AR reduction. |
3楼2013-03-23 16:16:15