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拿出一半家产,求高手帮我的一段英文润色啊.谢谢
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1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) are sketched in Fig. 1 (a). Fig. 1 (b) shows the AR-H curves for the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C. One can see the AR value drops from 1.0% for the as-deposited sample to about only 0.2% for the annealed one when d =5 nm. However, for d =30 nm, the AR value reaches about 3% for the annealed sample, which is very close to that of the sample in the as-grown state. In contrast, when d =80 nm, the AR value increases from 3.7% for the as-deposited sample to 4.7% for the annealed one, the value of which even exceeds the bulk value. As expected, Figure 1(c) shows the relationship between the AR and the MN thickness for the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas when the film thickness exceeds a critical thickness of 30nm, AR values of the annealed samples are significantly higher than those of the as-deposited samples. Apparently, AR change after annealing shows a significant thickness dependent behavior. 文中有些结构被替换掉了，请见谅 2. the grain size changes little after annealing, so in this case, what causing the abnormal resistivity increase and the resulted AR reduction remains indefinitive. [ Last edited by 柠檬树 on 2013-3-23 at 12:05 ] |
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bwshanxi
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| 结构AlN（1纳米）/ MN（d纳米）/AlN（1纳米）的绘制如图1（a）图1（b）表示退火前和退火后对AR-H的AlN（1纳米）/ MN（d纳米）/AlN（1纳米）薄膜〔d= 5，30，80] 曲线在400℃。可以看到AR值从1.0％下降为沉积的样品大约只有0.2％的退火当d =5纳米时候。然而，当d =30nm时候，在AR值达到退火的样品的约3％，这是非常接近在生长状态的样品。相反，当d =80nm时候，AR的值从3.7％增加为沉积样品退火的1至4.7％，甚至超过大容量值，它的值。正如预期的那样，图1（c）示出的关系之间的AR和MN厚度的AlN/ MN/ AlN成前和退火后，在400℃下值得注意的是，退火后的样品的AR值明显低于那些生长的当d<30nm左右，而当薄膜厚度超过某一临界厚度为30nm时，退火后的样品的AR值显着高于如此沉积的样品。显然，AR变化后退火显示了显着的厚度依赖行为。 |
2楼2013-03-23 12:48:41
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柠檬树: 金币+30, 翻译EPI+1, ★★★★★最佳答案, 非常有用 非常感谢啊 2013-03-23 16:30:52
柠檬树: 金币+30, 翻译EPI+1, ★★★★★最佳答案, 非常有用 非常感谢啊 2013-03-23 16:30:52
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1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) and the AR-H curves of the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C are shown in Fig. 1 (a) and Fig. 1 (b), respectively. It can be seen that the AR value drops from 1.0% to 0.2% after annealing the sample with d =5 nm. However, for the sample with d =30 nm, the AR value reaches about 3% after annealing, which is very close to that of the as-grown sample. In contrast, the AR value increases from 3.7% to 4.7% for the sample with d =80 nm after annealing, (the value of) which even exceeds the bulk value. Figure 1(c) shows the relationship between the AR and the MN thickness of the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas the AR values of the annealed samples are significantly higher than those of the as-deposited samples when the film thickness exceeds a critical thickness of 30nm. Apparently, AR change after annealing shows a significant thickness dependent behavior. 2. Since the grain size changes little after annealing, it still remains unclear exactly what causes the increase of the abnormal resistivity and the consequent AR reduction. |
3楼2013-03-23 16:16:15