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【答案】应助回帖
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柠檬树: 金币+30, 翻译EPI+1, ★★★★★最佳答案, 非常有用 非常感谢啊 2013-03-23 16:30:52
1。The structures of the AlN(1 nm)/MN(d nm)/AlN(1 nm) and the AR-H curves of the AlN(1 nm)/MN(d nm)/AlN(1 nm) films [d =5, 30, 80] before and after annealing at 400 °C are shown in Fig. 1 (a) and Fig. 1 (b), respectively. It can be seen that the AR value drops from 1.0% to 0.2% after annealing the sample with d =5 nm. However, for the sample with d =30 nm, the AR value reaches about 3% after annealing, which is very close to that of the as-grown sample. In contrast, the AR value increases from 3.7% to 4.7% for the sample with d =80 nm after annealing, (the value of) which even exceeds the bulk value.
Figure 1(c) shows the relationship between the AR and the MN thickness of the AlN/MN/AlN before and after annealing at 400 °C. It is noted that the AR values of the annealed samples are significantly lower than those of the as-grown ones when d < 30nm, whereas the AR values of the annealed samples are significantly higher than those of the as-deposited samples when the film thickness exceeds a critical thickness of 30nm. Apparently, AR change after annealing shows a significant thickness dependent behavior.
2. Since the grain size changes little after annealing, it still remains unclear exactly what causes the increase of the abnormal resistivity and the consequent AR reduction. |
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