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The In2O3 based sensor shows different sensing responses towards various gases. The different diffusivities and reactivity of these gases would be the key factors influencing this issue [28]. The gas transport without external pressure can be described by Knudsen diffusion. According the corresponding model, gas transport occurs mainly by molecular diffusion in macropores (with diameter > 25nm), while surface diffusion becomes predominant in micropores (with diameter < 1 nm). In fact, our In2O3-based sensor contains two kind pores: the pore in the In2O3 nanoplatelets (with diameter 2-4 nm), and the larger pores (gaps) between adjacent In2O3 nanoplatelets (with diameter >>25 nm from the observation of SEM image (Fig. 4a)). It is believed that the gas transport in our In2O3 sensor occurs mainly by molecular diffusion. This indicates the analytes may be able to diffuse similar depth into the In2O3 sensing layer. Therefore, the different diffusivities of the analytes in our sensor would slightly contribute to the sensing response. On the other hand, the reactivity of these analytes would be responsible for the obtained sequence of sensing response. From the ionosorption model [29] of oxide semiconductor gas sensor, reducing gases abstract surface-bound oxygen which immobilized the conduction electron, thereby release immobilized electron into the crystal and induce the change of the conductivity of the sensor. These analytes have different ability to abstract surface-bound oxygen, and so showing different sensing response. In addition, the different reaction kinetics of these analytes may be another factor resulting in the different sensing response. We believe that the compositive influence of these aspects of the analytes induces the consequence of the sensing responses. The gas sensing superiority of our prepared porous In2O3 nanoplatelets is easily understood. From the theoretical simulation and experimental results, the sensor response could remarkably increase as the average crystallite size decreased to below 20 nm, which is about twice the thickness of electron depletion layer [30-33]. The thickness of our prepared In2O3 nanoplatelets is below 6 nm, which is much thinner than twice the thickness of electron depletion layer. That is obviously beneficial to the enhancement of sensing performance. Secondly, our prepared In2O3 nanoplatelets are of single crystalline and porous feature. The carrier transport is easy in the single crystalline structure. It is believed that not only the electrons are easily depleted but also the sensor has higher stability owing to the high crystallinity of the sensing materials. Furthermore, bigger accessible surface together with convenient transport of gas can be benefited from the porous structure [28]. Comparatively, the commercial In2O3 with bigger size has much lower sensitivity. Thirdly, the unique 2-D nanostructures are stable [34-36]. They are effective in mitigating the strong agglomeration between nanoplatelets. As revealed by the reported sensing mechanism, the resistance of the sensing film is controlled by the internanocrystal barrier at the contacts, and the sensitivity results mainly from the barrier modulation at the contacts by gas [37]. A distinct characteristic of the sensing film composed of In2O3 nanoplatelets is that most of the contacts between them are face-face contacts, which has large contact area with most of them contributing to the sensing. This is in contrast to other structure such as nanospheres or nanowires [38]. In addition, our prepared In2O3 nanoplatelets are bound by {110} planes with higher energy, which would have higher gas adsorption and reactivity [4, 19, 20]. Therefore, the In2O3 nanoplatelets possess a good sensing performance and would be promising candidates for fabricating high performance gas sensors. |
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雪夕(金币+20, 翻译EPI+1): 2011-04-05 10:43:15
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面对各种气体，氧化铟传感器的传感响应表现均不一样。这些气体的不同的扩散率和反应活性本文的影响都有着重要影响[28]。Knudsen扩散描述了，气体运输不需要外力就可以进行。根据相应的模型、气体运输的发生是通过大孔隙（ 直径>25nm）的分子扩散,而表面扩散主要通过微孔的方式扩散(直径< 1纳米)。事实上,我们的氧化铟传感器包含两种气孔:孔隙直径如氧化铟纳米级(2-4纳米),和更大的气孔(空白)相邻氧化铟纳米级 (直径> >25纳米 从观测的扫描电镜照片得出(图4)）。此举被认为在我们的氧化铟传感器的气体运输主要是分子扩散的形式。这表明这一过程可以扩散到类似的深度氧化铟感应层。因此,不同的样本扩散率传感器会稍微有助于传感响应。 另一方面,这些样本的反应性将负责在获得传感响应序列。从ionosorption模型(29)的氧化物半导体气敏传感器得知,减少气体中表面范围上提取的氧气,能固定化传导电子,从而释放固定电子进入入晶体和导致电导率传感器的改变。这些样品有不同的能力提取表面范围上的氧气,所以表达不同传感响应。此外,不同的反应动力学的这些样品可能成为另一个因素导致不同的传感响应。我们相信,样品各方面的综合的影响最终导致传感反应的最终结果。 我们准备好的有气孔的纳米级氧化铟的气体传感优势比较通俗易懂。从理论模拟和实验结果表明,该传感器响应可显著的增加。 |
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