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The In2O3 based sensor shows different sensing responses towards various gases. The different diffusivities and reactivity of these gases would be the key factors influencing this issue [28]. The gas transport without external pressure can be described by Knudsen diffusion. According the corresponding model, gas transport occurs mainly by molecular diffusion in macropores (with diameter > 25nm), while surface diffusion becomes predominant in micropores (with diameter < 1 nm). In fact, our In2O3-based sensor contains two kind pores: the pore in the In2O3 nanoplatelets (with diameter 2-4 nm), and the larger pores (gaps) between adjacent In2O3 nanoplatelets (with diameter >>25 nm from the observation of SEM image (Fig. 4a)). It is believed that the gas transport in our In2O3 sensor occurs mainly by molecular diffusion. This indicates the analytes may be able to diffuse similar depth into the In2O3 sensing layer. Therefore, the different diffusivities of the analytes in our sensor would slightly contribute to the sensing response.
On the other hand, the reactivity of these analytes would be responsible for the obtained sequence of sensing response. From the ionosorption model [29] of oxide semiconductor gas sensor, reducing gases abstract surface-bound oxygen which immobilized the conduction electron, thereby release immobilized electron into the crystal and induce the change of the conductivity of the sensor. These analytes have different ability to abstract surface-bound oxygen, and so showing different sensing response. In addition, the different reaction kinetics of these analytes may be another factor resulting in the different sensing response. We believe that the compositive influence of these aspects of the analytes induces the consequence of the sensing responses.
The gas sensing superiority of our prepared porous In2O3 nanoplatelets is easily understood. From the theoretical simulation and experimental results, the sensor response could remarkably increase as the average crystallite size decreased to below 20 nm, which is about twice the thickness of electron depletion layer [30-33]. The thickness of our prepared In2O3 nanoplatelets is below 6 nm, which is much thinner than twice the thickness of electron depletion layer. That is obviously beneficial to the enhancement of sensing performance. Secondly, our prepared In2O3 nanoplatelets are of single crystalline and porous feature. The carrier transport is easy in the single crystalline structure. It is believed that not only the electrons are easily depleted but also the sensor has higher stability owing to the high crystallinity of the sensing materials. Furthermore, bigger accessible surface together with convenient transport of gas can be benefited from the porous structure [28]. Comparatively, the commercial In2O3 with bigger size has much lower sensitivity. Thirdly, the unique 2-D nanostructures are stable [34-36]. They are effective in mitigating the strong agglomeration between nanoplatelets. As revealed by the reported sensing mechanism, the resistance of the sensing film is controlled by the internanocrystal barrier at the contacts, and the sensitivity results mainly from the barrier modulation at the contacts by gas [37]. A distinct characteristic of the sensing film composed of In2O3 nanoplatelets is that most of the contacts between them are face-face contacts, which has large contact area with most of them contributing to the sensing. This is in contrast to other structure such as nanospheres or nanowires [38]. In addition, our prepared In2O3 nanoplatelets are bound by {110} planes with higher energy, which would have higher gas adsorption and reactivity [4, 19, 20]. Therefore, the In2O3 nanoplatelets possess a good sensing performance and would be promising candidates for fabricating high performance gas sensors.

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