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一点红: 金币+5, ★★★★★最佳答案 2015-12-08 09:03:21
心静_依然: LS-EPI+1, 感谢应助 2015-12-08 09:26:26
Accession number:       
20152901037299
SCI未检索到,这是EI的结果
3楼2015-12-07 22:36:43
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感谢参与,应助指数 +1
Accession number:       
20152901037299
        Title:        Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer
        Authors:         Luan, Xiaodong1 Email author luanyz1988@126.com; Liu, Yuling1; Niu, Xinhuan1; Wang, Juan1
        Author affiliation:        1 Institute of Microelectronics, Hebei University of Technology, Tianjin, China
        Corresponding author:         Luan, Xiaodong
        Source title:        Journal of Semiconductors
        Abbreviated source title:        J. Semicond.
        Volume:        36
        Issue:        7
        Issue date:        July 1, 2015
        Publication year:        2015
        Article number:        076001
        Language:        English
        ISSN:         16744926
        Document type:        Journal article (JA)
        Publisher:        Institute of Physics Publishing
        Abstract:        Controllable removal rate selectivity with various films (Cu, Ta, SiO<inf>2</inf> is a challenging job in barrier CMP. H<inf>2</inf>O<inf>2</inf> as an oxidizer and benzotriazole (BTA) as an inhibitor is considered to be an effective method in barrier CMP. Slurries that contain hydrogen peroxide have a very short shelf life because H<inf>2</inf>O<inf>2</inf> is unstable and easily decomposed. BTA can cause post-CMP challenges, such as organic residue, toxicity and particle adhesion. We have been engaged in studying a weakly alkaline barrier slurry without oxidizer and benzotriazole. Based on these works, the objective of this paper is to discuss the mechanism of the development of the barrier slurry without oxidizer and benzotriazole by studying the effects of the different components (containing colloidal silica, FA/O complexing agent, pH of polishing solution and guanidine nitrate) on removal rate selectivity. The possible related polishing mechanism has also been proposed. &copy; 2015 Chinese Institute of Electronics.
        Number of references:        22
        Main heading:         Slurries
        Controlled terms:         Alkalinity - Catalyst selectivity - Cleaning - Copper - Polishing
        Uncontrolled terms:         Alkaline barrier slurries - Benzotriazole(BTA) - CMP - Colloidal silica - Complexing agents - Organic residues - Particle adhesion - Polishing mechanism
        Classification code:         524 Solid Fuels - 533 Ore Treatment and Metal Refining - 544.1 Copper - 604.2 Machining Operations - 801.1 Chemistry, General - 802.3 Chemical Operations - 803 Chemical Agents and Basic Industrial Chemicals - 804 Chemical Products Generally
        DOI:        10.1088/1674-4926/36/7/076001
        Database:        Compendex
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