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baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4643 (副教授)
- 贵宾: 46.97
- 金币: 659206
- 散金: 11616
- 红花: 995
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- 帖子: 69600
- 在线: 13499.1小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
感谢参与，应助指数 +1
|
Accession number: 20152901037299 Title: Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer Authors: Luan, Xiaodong1 Email author luanyz1988@126.com; Liu, Yuling1; Niu, Xinhuan1; Wang, Juan1 Author affiliation: 1 Institute of Microelectronics, Hebei University of Technology, Tianjin, China Corresponding author: Luan, Xiaodong Source title: Journal of Semiconductors Abbreviated source title: J. Semicond. Volume: 36 Issue: 7 Issue date: July 1, 2015 Publication year: 2015 Article number: 076001 Language: English ISSN: 16744926 Document type: Journal article (JA) Publisher: Institute of Physics Publishing Abstract: Controllable removal rate selectivity with various films (Cu, Ta, SiO<inf>2</inf>  is a challenging job in barrier CMP. H<inf>2</inf>O<inf>2</inf> as an oxidizer and benzotriazole (BTA) as an inhibitor is considered to be an effective method in barrier CMP. Slurries that contain hydrogen peroxide have a very short shelf life because H<inf>2</inf>O<inf>2</inf> is unstable and easily decomposed. BTA can cause post-CMP challenges, such as organic residue, toxicity and particle adhesion. We have been engaged in studying a weakly alkaline barrier slurry without oxidizer and benzotriazole. Based on these works, the objective of this paper is to discuss the mechanism of the development of the barrier slurry without oxidizer and benzotriazole by studying the effects of the different components (containing colloidal silica, FA/O complexing agent, pH of polishing solution and guanidine nitrate) on removal rate selectivity. The possible related polishing mechanism has also been proposed. © 2015 Chinese Institute of Electronics.Number of references: 22 Main heading: Slurries Controlled terms: Alkalinity - Catalyst selectivity - Cleaning - Copper - Polishing Uncontrolled terms: Alkaline barrier slurries - Benzotriazole(BTA) - CMP - Colloidal silica - Complexing agents - Organic residues - Particle adhesion - Polishing mechanism Classification code: 524 Solid Fuels - 533 Ore Treatment and Metal Refining - 544.1 Copper - 604.2 Machining Operations - 801.1 Chemistry, General - 802.3 Chemical Operations - 803 Chemical Agents and Basic Industrial Chemicals - 804 Chemical Products Generally DOI: 10.1088/1674-4926/36/7/076001 Database: Compendex |
2楼2015-12-07 22:36:12
baiyuefei
版主 (文学泰斗)
风雪
- 应助: 4643 (副教授)
- 贵宾: 46.97
- 金币: 659206
- 散金: 11616
- 红花: 995
- 沙发: 81
- 帖子: 69600
- 在线: 13499.1小时
- 虫号: 676696
- 注册: 2008-12-18
- 性别: GG
- 专业: 合成药物化学
- 管辖: 有机交流
【答案】应助回帖
★ ★ ★ ★ ★
一点红: 金币+5, ★★★★★最佳答案 2015-12-08 09:03:21
心静_依然: LS-EPI+1, 感谢应助 2015-12-08 09:26:26
一点红: 金币+5, ★★★★★最佳答案 2015-12-08 09:03:21
心静_依然: LS-EPI+1, 感谢应助 2015-12-08 09:26:26
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Accession number: 20152901037299 SCI未检索到，这是EI的结果 |
3楼2015-12-07 22:36:43
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