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1.Silica network densified and small holes sealed because of structural adjustment during heating process, and thus the oxidation was stopped at lower temperature. 2.The oxidation resistance temperature was improved at least 40¡æ than the previous work . Meanwhile, the oxidation ended at 673 and 693¡æ for samples 1 and 2 which is lower than pristine UFDs. |
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- ·ÒëEPI: 1690
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SunShine-91: ½ð±Ò+3, ·ÒëEPI+1, ¡ï¡ï¡ïºÜÓаïÖú, ºÜ¸øÁ¦£¬Ð»Ð» 2015-06-21 10:14:19
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3Â¥2015-06-21 09:40:04
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SunShine-91: ½ð±Ò+2, ¡ï¡ï¡ïºÜÓаïÖú, лл°ïÖú£¬ºÜÓÐÓð¡ 2015-06-21 10:15:21
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µÚÒ»¾äûÓﲡ ½¨Òé¸ÄµÚ¶þ¾äΪ The oxidation resistance temperature was at least 40¡æ LOWER than PREVIOUSLY REPORTED [×ÊÁÏÀ´Ô´] Oxidation ended at 673¡æ and 693¡æ for samples 1 and 2, RESPECTIVELY, BOTH OF which ARE lower than pristine UFD's. UFD ÊÇËõд, UFD's ÊǸ´Êý |
2Â¥2015-06-21 09:33:17














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