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ÌâÄ¿£ºEquivalence of Displacement Radiation Damage in Superluminescent Diodes Induced by Protons and Heavy Ions.
     ×÷Õߣº Xingji  Li,Chaoming Liu,Mujie Lan,Liyi Xiao,Jianchun Liu,Dongfa Ding,Dezhuang Yang,Shiyu He
     ¿¯Î Nuclear Instruments and Methods IN physics Research,Section A:Accelerators,Spectrometers,Detectors and Associated    Equipment.2013,VOL.716 pp:10-14
  


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Accession number:
       

20131816288104
         
Title:
        Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions
         
Authors:
        Li, Xingji1 Email author lxj0218@hit.edu.cn; Liu, Chaoming1; Lan, Mujie2; Xiao, Liyi2; Liu, Jianchun3; Ding, Dongfa3; Yang, Dezhuang1; He, Shiyu1
          Author affiliation:         1 School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
                  2 Center of Micro-electronics, Harbin Institute of Technology, Harbin 150001, China
                  3 Beijing Aerospace Times Optical-electronic Technology Co.Ltd, Beijing 100854, China
         
Corresponding author:
        Li, X. (lxj0218@hit.edu.cn)
         
Source title:
        Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
         
Abbreviated source title:
        Nucl Instrum Methods Phys Res Sect A
         
Volume:
        716
         
Issue date:
        2013
         
Publication year:
        2013
         
Pages:
        10-14
         
Language:
        English
         
ISSN:
        01689002
         
CODEN:
        NIMAER
         
Document type:
        Journal article (JA)
         
Publisher:
        Elsevier, P.O. Box 211, Amsterdam, 1000 AE, Netherlands
         
Abstract:
        The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. © 2013 Elsevier B.V.
         
Number of references:
        28
         
Main heading:
        Protons
         
Controlled terms:
        Carbon  -  Irradiation  -  Radiation damage
         
Uncontrolled terms:
        Calculation results  -  Carbon ions  -  Displacement damages  -  Displacement dose  -  Irradiation testing  -  Lower energies  -  Optical power  -  Superluminescent diode
         
Classification code:
        622.2 Radiation Effects -  711.1 Electromagnetic Waves in Different Media -  804 Chemical Products Generally -  932.1 High Energy Physics
          DOI:         10.1016/j.nima.2013.03.055
         
Database:
        Compendex
                  Compilation and indexing terms, © 2014 Elsevier Inc.
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Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions

×÷Õß:Li, XJ (Li, Xingji)[ 1 ] ; Liu, CM (Liu, Chaoming)[ 1 ] ; Lan, MJ (Lan, Mujie)[ 2 ] ; Xiao, LY (Xiao, Liyi)[ 2 ] ; Liu, JC (Liu, Jianchun)[ 3 ] ; Ding, DF (Ding, Dongfa)[ 3 ] ; Yang, DZ (Yang, Dezhuang)[ 1 ] ; He, SY (He, Shiyu)[ 1 ]

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

¾í: 716

Ò³: 10-14

DOI: 10.1016/j.nima.2013.03.055

³ö°æÄê: JUL 11 2013

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The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. (c) 2013 Elsevier B.V. All rights reserved.
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×÷Õ߹ؼü´Ê:Superluminescent diodes; Displacement damage; Equivalence of radiation damage; Degradation of optical power

KeyWords Plus:LIGHT-EMITTING-DIODES; SILICON; GAAS; IRRADIATION; NIEL
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ͨѶ×÷ÕßµØÖ·: Li, XJ (ͨѶ×÷Õß)
[ÏÔʾÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ]         Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China.

µØÖ·:
[ÏÔʾÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ]         [ 1 ] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[ÏÔʾÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ]         [ 2 ] Harbin Inst Technol, Ctr Microelect, Harbin 150001, Peoples R China
              [ 3 ] Beijing Aerosp Times Opt Elect Technol Co Ltd, Beijing 100854, Peoples R China

µç×ÓÓʼþµØÖ·:lxj0218@hit.edu.cn
»ù½ð×ÊÖúÖÂл
»ù½ð×ÊÖú»ú¹¹        ÊÚȨºÅ
National Natural Science Foundation of China        
11205038
Chinese Postdoctoral Science Foundation        
2012M510951
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ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
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Ñо¿·½Ïò:Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy

Web of Science Àà±ð:Instruments & Instrumentation; Nuclear Science & Technology; Physics, Particles & Fields; Spectroscopy
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ÎÄÏ×ÀàÐÍ:Article

ÓïÖÖ:English

Èë²ØºÅ: WOS:000319253300002

ISSN: 0168-9002
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    Impact Factor (Ó°ÏìÒò×Ó): Journal Citation Reports®

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Accession number:
       

20131816288104
         
Title:
        Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions
         
Authors:
        Li, Xingji1  ...

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