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ÌâÄ¿£ºEquivalence of Displacement Radiation Damage in Superluminescent Diodes Induced by Protons and Heavy Ions. ×÷Õߣº Xingji Li,Chaoming Liu,Mujie Lan,Liyi Xiao,Jianchun Liu,Dongfa Ding,Dezhuang Yang,Shiyu He ¿¯Î Nuclear Instruments and Methods IN physics Research,Section A:Accelerators,Spectrometers,Detectors and Associated Equipment.2013,VOL.716 pp:10-14 û°ì·¨£¬²»ÄÜͬʱ·¢ÈýƪÎÄÕ£¬Ö»ÄÜһƪһƪÁË¡£ÎÊÌâͬÒÔÉÏ·¢²¼µÄÁ½¸öÇóÖú£¨»áÒéÂÛÎÄ£¬µ«ÊÇÓб»SCI»òÕßEIÊÕ¼£©¡£¸Ðл¸÷λÁË£¡£¡ |
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EIÊÕ¼ Accession number: 20131816288104 Title: Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions Authors: Li, Xingji1 Email author lxj0218@hit.edu.cn; Liu, Chaoming1; Lan, Mujie2; Xiao, Liyi2; Liu, Jianchun3; Ding, Dongfa3; Yang, Dezhuang1; He, Shiyu1 Author affiliation: 1 School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China 2 Center of Micro-electronics, Harbin Institute of Technology, Harbin 150001, China 3 Beijing Aerospace Times Optical-electronic Technology Co.Ltd, Beijing 100854, China Corresponding author: Li, X. (lxj0218@hit.edu.cn) Source title: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated source title: Nucl Instrum Methods Phys Res Sect A Volume: 716 Issue date: 2013 Publication year: 2013 Pages: 10-14 Language: English ISSN: 01689002 CODEN: NIMAER Document type: Journal article (JA) Publisher: Elsevier, P.O. Box 211, Amsterdam, 1000 AE, Netherlands Abstract: The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. © 2013 Elsevier B.V. Number of references: 28 Main heading: Protons Controlled terms: Carbon - Irradiation - Radiation damage Uncontrolled terms: Calculation results - Carbon ions - Displacement damages - Displacement dose - Irradiation testing - Lower energies - Optical power - Superluminescent diode Classification code: 622.2 Radiation Effects - 711.1 Electromagnetic Waves in Different Media - 804 Chemical Products Generally - 932.1 High Energy Physics DOI: 10.1016/j.nima.2013.03.055 Database: Compendex Compilation and indexing terms, © 2014 Elsevier Inc. |

2Â¥2014-11-19 09:39:30
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SCIÊÕ¼¡£ Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions ×÷Õß:Li, XJ (Li, Xingji)[ 1 ] ; Liu, CM (Liu, Chaoming)[ 1 ] ; Lan, MJ (Lan, Mujie)[ 2 ] ; Xiao, LY (Xiao, Liyi)[ 2 ] ; Liu, JC (Liu, Jianchun)[ 3 ] ; Ding, DF (Ding, Dongfa)[ 3 ] ; Yang, DZ (Yang, Dezhuang)[ 1 ] ; He, SY (He, Shiyu)[ 1 ] NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT ¾í: 716 Ò³: 10-14 DOI: 10.1016/j.nima.2013.03.055 ³ö°æÄê: JUL 11 2013 ²é¿´ÆÚ¿¯ÐÅÏ¢ ÕªÒª The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. (c) 2013 Elsevier B.V. All rights reserved. ¹Ø¼ü´Ê ×÷Õ߹ؼü´Ê:Superluminescent diodes; Displacement damage; Equivalence of radiation damage; Degradation of optical power KeyWords Plus:LIGHT-EMITTING-DIODES; SILICON; GAAS; IRRADIATION; NIEL ×÷ÕßÐÅÏ¢ ͨѶ×÷ÕßµØÖ·: Li, XJ (ͨѶ×÷Õß) [ÏÔʾÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China. µØÖ·: [ÏÔʾÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ] [ 1 ] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China [ÏÔʾÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ] [ 2 ] Harbin Inst Technol, Ctr Microelect, Harbin 150001, Peoples R China [ 3 ] Beijing Aerosp Times Opt Elect Technol Co Ltd, Beijing 100854, Peoples R China µç×ÓÓʼþµØÖ·:lxj0218@hit.edu.cn »ù½ð×ÊÖúÖÂл »ù½ð×ÊÖú»ú¹¹ ÊÚȨºÅ National Natural Science Foundation of China 11205038 Chinese Postdoctoral Science Foundation 2012M510951 ²é¿´»ù½ð×ÊÖúÐÅÏ¢ ³ö°æÉÌ ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS Àà±ð / ·ÖÀà Ñо¿·½Ïò:Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy Web of Science Àà±ð:Instruments & Instrumentation; Nuclear Science & Technology; Physics, Particles & Fields; Spectroscopy ÎÄÏ×ÐÅÏ¢ ÎÄÏ×ÀàÐÍ:Article ÓïÖÖ:English Èë²ØºÅ: WOS:000319253300002 ISSN: 0168-9002 ÆÚ¿¯ÐÅÏ¢ Impact Factor (Ó°ÏìÒò×Ó): Journal Citation Reports® ÆäËûÐÅÏ¢ IDS ºÅ: 148NZ Web of Science ºËÐĺϼ¯ÖÐµÄ "ÒýÓõIJο¼ÎÄÏ×": 26 Web of Science ºËÐĺϼ¯ÖÐµÄ "±»ÒýƵ´Î": 0 |

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4Â¥2014-11-19 13:45:01
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5Â¥2014-11-19 13:59:46
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6Â¥2014-11-19 14:39:16
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7Â¥2014-11-19 14:57:59













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