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可雅

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[求助] 帮忙找下检索号，急！！

题目：Equivalence of Displacement Radiation Damage in Superluminescent Diodes Induced by Protons and Heavy Ions.
     作者： Xingji  Li,Chaoming Liu,Mujie Lan,Liyi Xiao,Jianchun Liu,Dongfa Ding,Dezhuang Yang,Shiyu He
     刊物： Nuclear Instruments and Methods IN physics Research,Section A:Accelerators,Spectrometers,Detectors and Associated    Equipment.2013,VOL.716 pp:10-14
  


没办法，不能同时发三篇文章，只能一篇一篇了。问题同以上发布的两个求助（会议论文，但是有被SCI或者EI收录）。感谢各位了！！
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1楼 2014-11-19 09:10:50
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muse

捐助贵宾 (知名作家)

【答案】应助回帖

感谢参与，应助指数 +1
EI收录

Accession number:
       

20131816288104
         
Title:
        Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions
         
Authors:
        Li, Xingji1 Email author lxj0218@hit.edu.cn; Liu, Chaoming1; Lan, Mujie2; Xiao, Liyi2; Liu, Jianchun3; Ding, Dongfa3; Yang, Dezhuang1; He, Shiyu1
          Author affiliation:         1 School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
                  2 Center of Micro-electronics, Harbin Institute of Technology, Harbin 150001, China
                  3 Beijing Aerospace Times Optical-electronic Technology Co.Ltd, Beijing 100854, China
         
Corresponding author:
        Li, X. (lxj0218@hit.edu.cn)
         
Source title:
        Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
         
Abbreviated source title:
        Nucl Instrum Methods Phys Res Sect A
         
Volume:
        716
         
Issue date:
        2013
         
Publication year:
        2013
         
Pages:
        10-14
         
Language:
        English
         
ISSN:
        01689002
         
CODEN:
        NIMAER
         
Document type:
        Journal article (JA)
         
Publisher:
        Elsevier, P.O. Box 211, Amsterdam, 1000 AE, Netherlands
         
Abstract:
        The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. © 2013 Elsevier B.V.
         
Number of references:
        28
         
Main heading:
        Protons
         
Controlled terms:
        Carbon  -  Irradiation  -  Radiation damage
         
Uncontrolled terms:
        Calculation results  -  Carbon ions  -  Displacement damages  -  Displacement dose  -  Irradiation testing  -  Lower energies  -  Optical power  -  Superluminescent diode
         
Classification code:
        622.2 Radiation Effects -  711.1 Electromagnetic Waves in Different Media -  804 Chemical Products Generally -  932.1 High Energy Physics
          DOI:         10.1016/j.nima.2013.03.055
         
Database:
        Compendex
                  Compilation and indexing terms, © 2014 Elsevier Inc.
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2楼2014-11-19 09:39:30
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muse

捐助贵宾 (知名作家)

【答案】应助回帖

★ ★ ★ ★ ★ ★ ★ ★ ★ ★
可雅: 金币+10, ★★★★★最佳答案, 非常感谢，毕业好多年，工作一直没有时间在线，但是一遇到这样类似的问题首先想到的是这里能给出答案。非常感谢！以后有时间会经常关注这个论坛的。 2014-11-19 16:07:59
jssxh: LS-EPI+1, 谢谢参与，请继续关注本版块！ 2014-11-20 14:30:35
SCI收录。
Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions

作者:Li, XJ (Li, Xingji)[ 1 ] ; Liu, CM (Liu, Chaoming)[ 1 ] ; Lan, MJ (Lan, Mujie)[ 2 ] ; Xiao, LY (Xiao, Liyi)[ 2 ] ; Liu, JC (Liu, Jianchun)[ 3 ] ; Ding, DF (Ding, Dongfa)[ 3 ] ; Yang, DZ (Yang, Dezhuang)[ 1 ] ; He, SY (He, Shiyu)[ 1 ]

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

卷: 716

页: 10-14

DOI: 10.1016/j.nima.2013.03.055

出版年: JUL 11 2013

查看期刊信息
摘要

The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. (c) 2013 Elsevier B.V. All rights reserved.
关键词

作者关键词:Superluminescent diodes; Displacement damage; Equivalence of radiation damage; Degradation of optical power

KeyWords Plus:LIGHT-EMITTING-DIODES; SILICON; GAAS; IRRADIATION; NIEL
作者信息

通讯作者地址: Li, XJ (通讯作者)
[显示增强组织信息的名称]         Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China.

地址:
[显示增强组织信息的名称]         [ 1 ] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[显示增强组织信息的名称]         [ 2 ] Harbin Inst Technol, Ctr Microelect, Harbin 150001, Peoples R China
              [ 3 ] Beijing Aerosp Times Opt Elect Technol Co Ltd, Beijing 100854, Peoples R China

电子邮件地址:lxj0218@hit.edu.cn
基金资助致谢
基金资助机构        授权号
National Natural Science Foundation of China        
11205038
Chinese Postdoctoral Science Foundation        
2012M510951
查看基金资助信息   
出版商

ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
类别 / 分类

研究方向:Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy

Web of Science 类别:Instruments & Instrumentation; Nuclear Science & Technology; Physics, Particles & Fields; Spectroscopy
文献信息

文献类型:Article

语种:English

入藏号: WOS:000319253300002

ISSN: 0168-9002
期刊信息

    Impact Factor (影响因子): Journal Citation Reports®

其他信息

IDS 号: 148NZ

Web of Science 核心合集中的 "引用的参考文献": 26

Web of Science 核心合集中的 "被引频次": 0
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3楼2014-11-19 09:40:06
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可雅

银虫 (小有名气)
引用回帖:
2楼: Originally posted by muse at 2014-11-19 09:39:30
EI收录

Accession number:
       

20131816288104
         
Title:
        Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions
         
Authors:
        Li, Xingji1  ...

您好，我再请教下，检索号是IDS number，还是DOI，还是ISI，我看了下小木虫其他求助帖，好像都说IDS才是检索号。
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4楼2014-11-19 13:45:01
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muse

捐助贵宾 (知名作家)

【答案】应助回帖

入藏号: WOS:000319253300002，这是针对文章的。
IDS号是针对每期期刊的。
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5楼2014-11-19 13:59:46
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可雅

银虫 (小有名气)
引用回帖:
5楼: Originally posted by muse at 2014-11-19 13:59:46
入藏号: WOS:000319253300002，这是针对文章的。
IDS号是针对每期期刊的。

那所谓的检索号是不是就是IDS呢
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6楼2014-11-19 14:39:16
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muse

捐助贵宾 (知名作家)
引用回帖:
6楼: Originally posted by 可雅 at 2014-11-19 14:39:16
那所谓的检索号是不是就是IDS呢...

入藏号: WOS:000319253300002
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7楼2014-11-19 14:57:59
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