|
|
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ 可雅: 金币+10, ★★★★★最佳答案, 非常感谢,毕业好多年,工作一直没有时间在线,但是一遇到这样类似的问题首先想到的是这里能给出答案。非常感谢!以后有时间会经常关注这个论坛的。 2014-11-19 16:07:59 jssxh: LS-EPI+1, 谢谢参与,请继续关注本版块! 2014-11-20 14:30:35
SCI收录。
Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions
作者:Li, XJ (Li, Xingji)[ 1 ] ; Liu, CM (Liu, Chaoming)[ 1 ] ; Lan, MJ (Lan, Mujie)[ 2 ] ; Xiao, LY (Xiao, Liyi)[ 2 ] ; Liu, JC (Liu, Jianchun)[ 3 ] ; Ding, DF (Ding, Dongfa)[ 3 ] ; Yang, DZ (Yang, Dezhuang)[ 1 ] ; He, SY (He, Shiyu)[ 1 ]
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
卷: 716
页: 10-14
DOI: 10.1016/j.nima.2013.03.055
出版年: JUL 11 2013
查看期刊信息
摘要
The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs. (c) 2013 Elsevier B.V. All rights reserved.
关键词
作者关键词:Superluminescent diodes; Displacement damage; Equivalence of radiation damage; Degradation of optical power
KeyWords Plus:LIGHT-EMITTING-DIODES; SILICON; GAAS; IRRADIATION; NIEL
作者信息
通讯作者地址: Li, XJ (通讯作者)
[显示增强组织信息的名称] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China.
地址:
[显示增强组织信息的名称] [ 1 ] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[显示增强组织信息的名称] [ 2 ] Harbin Inst Technol, Ctr Microelect, Harbin 150001, Peoples R China
[ 3 ] Beijing Aerosp Times Opt Elect Technol Co Ltd, Beijing 100854, Peoples R China
电子邮件地址:lxj0218@hit.edu.cn
基金资助致谢
基金资助机构 授权号
National Natural Science Foundation of China
11205038
Chinese Postdoctoral Science Foundation
2012M510951
查看基金资助信息
出版商
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
类别 / 分类
研究方向:Instruments & Instrumentation; Nuclear Science & Technology; Physics; Spectroscopy
Web of Science 类别:Instruments & Instrumentation; Nuclear Science & Technology; Physics, Particles & Fields; Spectroscopy
文献信息
文献类型:Article
语种:English
入藏号: WOS:000319253300002
ISSN: 0168-9002
期刊信息
Impact Factor (影响因子): Journal Citation Reports®
其他信息
IDS 号: 148NZ
Web of Science 核心合集中的 "引用的参考文献": 26
Web of Science 核心合集中的 "被引频次": 0 |
|