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On illumination of a trap-free p-type semiconductor, the promotion of photoelectrons to the conduction band is followed by rapid thermalization to the band-edge, resulting in an excess free-carrier density that is sustained over the band-to-band lifetime of the charge carriers. Õâ¶ÎÎÄ×ÖÇë´óÉñ°ïæ·Òëһϣ¬´ó¸ÅÊÇ˵°ëµ¼ÌåÔØÁ÷×ÓÊÙÃüµÄ£¬¾ßÌåµÄ¿´²»Ì«¶®¡£ |
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