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| All films possess compressive strain¡¡because d-spacing values of BBFO (4.150¨C4.046A ¡ã ) are¡¡larger than that of SNTO substrate (3.923A ¡ã ). |
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- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 120.6
- Ìû×Ó: 37
- ÔÚÏß: 14.7Сʱ
- ³æºÅ: 1679760
- ×¢²á: 2012-03-10
- רҵ: ½ðÊô²ÄÁϵÄÖÆ±¸¿ÆÑ§Óë¿çѧ
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Âé·³ÔÙÇë½ÌÏ The current¡¡level measured at £2V was considered for READing the information¡¡while the applied bias voltage of 5V and £5V¡¡were used to obtain high resistance/OFF state (HRS) and low¡¡resistance/ON state (LRS) (WRITE operation), respectively. Õâ¸öÆ«Öõçѹ£µ£öµÄ¸ß×è̬ºÍ££µ£ÖʱµÄµÍ×è̬¸ú££²£ÖÓÐʲô¹ØÏµ£¿ |
4Â¥2014-03-11 17:05:44
huanghuasjtu
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- Ó¦Öú: 241 (´óѧÉú)
- ½ð±Ò: 20430.8
- ºì»¨: 5
- Ìû×Ó: 2966
- ÔÚÏß: 576Сʱ
- ³æºÅ: 2123410
- ×¢²á: 2012-11-13
- ÐÔ±ð: GG
- רҵ: ½ðÊô·Ç¾§Ì¬¡¢×¼¾§ºÍÄÉÃ×¾§
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| d-spacing values of BBFO (4.150¨C4.046A ¡ã ) are¡¡larger than that of SNTO substrate (3.923A ¡ã ).Õâ¸öÖ¸µÄÊÇÔ×ÓÃæ¼ä¾à¡£ |

2Â¥2014-03-10 18:41:44
gyliu
Ìú¸Ëľ³æ (Ö°Òµ×÷¼Ò)
- CMEI: 1
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- ½ð±Ò: 16537.7
- É¢½ð: 9
- ºì»¨: 128
- Ìû×Ó: 3257
- ÔÚÏß: 512.8Сʱ
- ³æºÅ: 327449
- ×¢²á: 2007-03-19
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3Â¥2014-03-11 07:49:21
red_snow
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- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 120.6
- Ìû×Ó: 37
- ÔÚÏß: 14.7Сʱ
- ³æºÅ: 1679760
- ×¢²á: 2012-03-10
- רҵ: ½ðÊô²ÄÁϵÄÖÆ±¸¿ÆÑ§Óë¿çѧ
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The current¡¡level measured at £2V was considered for READing the information¡¡while the applied bias voltage of 5V and £5V¡¡were used to obtain high resistance/OFF state (HRS) and low¡¡resistance/ON state (LRS) (WRITE operation), respectively. Õâ¸öÆ«Öõçѹ£µ£öµÄ¸ß×è̬ºÍ££µ£ÖʱµÄµÍ×è̬¸ú££²£ÖÓÐʲô¹ØÏµ£¿ |
5Â¥2014-03-13 13:19:19













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