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1 A role for graphene in silicon-based semiconductor devices
×÷ÕßHyun-Jong Chung£¬À´×ÔÈýÐǵç×Ó
As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb
lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

2. Nanometre-scale electronics with III¨CV compound semiconductors
×÷ÕߣºJes¨²s A. del Alamo À´×ÔÂéÊ¡Àí¹¤
For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal¨Coxide¨Csemiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III¨CV compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.[ À´×Ô¿ÆÑмÒ×å ÄÉÃ×¼¼Êõ ][ Last edited by xiejf on 2011-11-17 at 23:28 ]
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