| 查看: 18200 | 回复: 603 | ||||
| 【奖励】 本帖被评价256次，作者xiejf增加金币 200 个 | ||||
| 本帖产生 1 个 MN-EPI ，点击这里进行查看 | ||||
| 当前只显示满足指定条件的回帖，点击这里查看本话题的所有回帖 | ||||
xiejf专家顾问 (文学泰斗)
|
[资源]
Nature上的两篇半导体器件的综述-2011.11.17
|
|||
|
最新一期的Nature杂志上连发了两篇半导体器件的Review，上传上来跟大家共享~ 1 A role for graphene in silicon-based semiconductor devices 作者Hyun-Jong Chung，来自三星电子 As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators. 2. Nanometre-scale electronics with III–V compound semiconductors 作者：Jesús A. del Alamo 来自麻省理工 For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III–V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.[ 来自科研家族 纳米技术 ][ Last edited by xiejf on 2011-11-17 at 23:28 ] |
回复此楼» 收录本帖的淘帖专辑推荐
» 本帖已获得的红花（最新10朵）
xwwang1886» 猜你喜欢
金属材料论文润色/翻译怎么收费?
已经有200人回复
» 本主题相关商家推荐: (我也要在这里推广)
» 本主题相关价值贴推荐，对您同样有帮助:
- 不等价掺杂半导体的间隙态会“停在"哪个原子上？
已经有14人回复
- 关于用交流阻抗测试半导体薄膜材料电阻率
已经有4人回复
- 关于两条DNA单链杂交技术
已经有4人回复
- 生物医用高分子材料领域最新（2001-2011）权威综述-Progress in Polymer Science
已经有72人回复
- 金属氧化物的半导体性质
已经有11人回复
- 微米纳米版2011年7月--12月资源帖汇总
已经有9人回复
- 金属与半导体接触的能带问题
已经有4人回复
xiejf
专家顾问 (文学泰斗)
-
专家经验: +509 - MN-EPI: 109
- 应助: 2943 (讲师)
- 贵宾: 2.534
- 金币: 110359
- 帖子: 84789
- 在线: 3388.2小时
- 虫号: 1003879
3楼2011-11-17 16:41:40
2楼2011-11-17 16:37:23
xiejf
专家顾问 (文学泰斗)
-
专家经验: +509 - MN-EPI: 109
- 应助: 2943 (讲师)
- 贵宾: 2.534
- 金币: 110359
- 帖子: 84789
- 在线: 3388.2小时
- 虫号: 1003879
4楼2011-11-17 17:07:49
简单回复
junyduan5楼
2011-11-17 17:37
回复
五星好评 顶一下，感谢分享！
qason116楼
2011-11-17 18:27
回复
三星好评 顶一下，感谢分享！
2011-11-17 22:12
回复
五星好评 顶一下，感谢分享！
zqlhs9楼
2011-11-17 22:30
回复
五星好评 顶一下，感谢分享！
poling10楼
2011-11-18 00:13
回复
五星好评 顶一下，感谢分享！
fliboy11楼
2011-11-18 01:10
回复
五星好评 顶一下，感谢分享！
fliboy12楼
2011-11-18 01:10
回复
顶一下，感谢分享！
灵光13楼
2011-11-18 04:35
回复
五星好评 顶一下，感谢分享！
jiazhixu99914楼
2011-11-18 07:58
回复
五星好评 顶一下，感谢分享！
投票:
