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xiejf

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[资源] Nature上的两篇半导体器件的综述-2011.11.17

最新一期的Nature杂志上连发了两篇半导体器件的Review，上传上来跟大家共享~
1 A role for graphene in silicon-based semiconductor devices
作者Hyun-Jong Chung，来自三星电子
As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb
lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

2. Nanometre-scale electronics with III–V compound semiconductors
作者：Jesús A. del Alamo 来自麻省理工
For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III–V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.[ 来自科研家族纳米技术 ][ Last edited by xiejf on 2011-11-17 at 23:28 ]

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1楼: Originally posted by xiejf at 2011-11-17 17:28:03:
最新一期的Nature杂志上连发了两篇半导体器件的Review，上传上来跟大家共享~
1 A role for graphene in silicon-based semiconductor devices
作者Hyun-Jong Chung，来自三星电子
As silicon-based electronic ...

麻烦楼主上传第二篇，第一篇好像下不了，谢谢