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okwl

木虫 (小有名气)

[求助] 关于XPS分析方面的翻译修改下英文语法-编辑说语法错误

原文:位于283.65 eV的较低能量的峰是典型的由于Si产生的化学位移,所以应该为C–Si键。强度最低的峰的结合能为285.66 eV应该是O或者N的-I效应引起的位移,所以推断应该是C–O 或 C–N键。
The peak with lower energy at 283.65 eV is typical for the chemical shift caused by Si Inductive Effects , corresponds to C–Si. The -I effects of O or N lead to the lowest intensity peaks at binding energies of 285.66 eV that can be assigned to C–O or C–N.

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Carena

铁杆木虫 (知名作家)


8814402(金币+1): 欢迎讨论 2011-08-18 19:06:47
The peak with lower energy at 283.65 eV is a typical chemical shift caused by Si Inductive Effects , corresponding to C–Si. 这一句有问题吗?我稍微改了下呀,语法是没有问题的。
Impossible Is Nothing
3楼2011-08-17 12:10:29
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Carena

铁杆木虫 (知名作家)

【答案】应助回帖


okwl(金币+20, 翻译EPI+1): 第一句也有问题,不过没改。还是要多谢了! 2011-08-16 23:00:12
爱与雨下(金币+1): 鼓励一下! 2011-08-18 08:37:47
The peak with lower energy at 283.65 eV is a typical chemical shift caused by Si Inductive Effects , corresponding to C–Si. The binding energy of lowest intensity peaks is 285.66 as a result of -I effect of O or N, which can be inferred as C–O or C–N.
Impossible Is Nothing
2楼2011-08-16 22:38:08
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hongliannu

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【答案】应助回帖

★ ★
8814402(金币+1): 感谢应助 2011-08-18 19:07:04
sltmac(金币+1): 欢迎常来 2011-08-19 08:32:02
okwl(金币+15): 谢谢应助! 2011-08-19 11:30:23
The peak of 283.65 eV in lower energy are is a typical chemical shift caused by Si Inductive Effects , ascribed to C–Si bond. The peaks with lowest binding energy at 285.66 can be the shift lead by -I effect of O or N, which can be asceibed to C–O or C–N.
4楼2011-08-18 11:42:26
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