| ²é¿´: 1028 | »Ø¸´: 3 | |||
| ±¾Ìû²úÉú 1 ¸ö ·ÒëEPI £¬µã»÷ÕâÀï½øÐв鿴 | |||
okwlľ³æ (СÓÐÃûÆø)
|
[ÇóÖú]
¹ØÓÚXPS·ÖÎö·½ÃæµÄ·ÒëÐÞ¸ÄÏÂÓ¢ÎÄÓï·¨-±à¼ËµÓï·¨´íÎó
|
||
|
ÔÎÄ£ºÎ»ÓÚ283.65 eVµÄ½ÏµÍÄÜÁ¿µÄ·åÊǵäÐ͵ÄÓÉÓÚSi²úÉúµÄ»¯Ñ§Î»ÒÆ£¬ËùÒÔÓ¦¸ÃΪC¨CSi¼ü¡£Ç¿¶È×îµÍµÄ·åµÄ½áºÏÄÜΪ285.66 eVÓ¦¸ÃÊÇO»òÕßNµÄ-IЧӦÒýÆðµÄÎ»ÒÆ£¬ËùÒÔÍÆ¶ÏÓ¦¸ÃÊÇC¨CO »ò C¨CN¼ü¡£ The peak with lower energy at 283.65 eV is typical for the chemical shift caused by Si Inductive Effects , corresponds to C¨CSi. The -I effects of O or N lead to the lowest intensity peaks at binding energies of 285.66 eV that can be assigned to C¨CO or C¨CN. |
» ²ÂÄãϲ»¶
Ò»Ö¾Ô¸»ª¶«Àí¹¤´óѧ081700£¬³õÊÔ·ÖÊý271
ÒѾÓÐ5È˻ظ´
081700 µ÷¼Á 267·Ö
ÒѾÓÐ7È˻ظ´
²ÄÁϵ÷¼Á
ÒѾÓÐ3È˻ظ´
Ò»Ö¾Ô¸ºÓ±±¹¤Òµ´óѧ0817»¯¹¤278·ÖÇóµ÷¼Á
ÒѾÓÐ10È˻ظ´
085600²ÄÁÏÓ뻯¹¤µ÷¼Á
ÒѾÓÐ12È˻ظ´
²ÄÁÏ292µ÷¼Á
ÒѾÓÐ4È˻ظ´
291Çóµ÷¼Á
ÒѾÓÐ8È˻ظ´
²ÄÁÏר˶ÕÒµ÷¼Á
ÒѾÓÐ3È˻ظ´
²ÄÁÏרҵÇóµ÷¼Á
ÒѾÓÐ11È˻ظ´
Ò»Ö¾Ô¸¹ú¿Æ¹ý³ÌËù081700£¬274Çóµ÷¼Á
ÒѾÓÐ3È˻ظ´

Carena
Ìú¸Ëľ³æ (ÖªÃû×÷¼Ò)
- ·ÒëEPI: 94
- Ó¦Öú: 5 (Ó×¶ùÔ°)
- ¹ó±ö: 0.542
- ½ð±Ò: 6371.2
- É¢½ð: 8657
- ºì»¨: 55
- ɳ·¢: 23
- Ìû×Ó: 5968
- ÔÚÏß: 357.5Сʱ
- ³æºÅ: 1049282
- ×¢²á: 2010-06-29
- ÐÔ±ð: MM
- רҵ: Íâ¹úÓïÑÔ
¡¾´ð°¸¡¿Ó¦Öú»ØÌû
¡ï
okwl(½ð±Ò+20, ·ÒëEPI+1): µÚÒ»¾äÒ²ÓÐÎÊÌ⣬²»¹ýû¸Ä¡£»¹ÊÇÒª¶àлÁË£¡ 2011-08-16 23:00:12
°®ÓëÓêÏÂ(½ð±Ò+1): ¹ÄÀøÒ»Ï£¡ 2011-08-18 08:37:47
okwl(½ð±Ò+20, ·ÒëEPI+1): µÚÒ»¾äÒ²ÓÐÎÊÌ⣬²»¹ýû¸Ä¡£»¹ÊÇÒª¶àлÁË£¡ 2011-08-16 23:00:12
°®ÓëÓêÏÂ(½ð±Ò+1): ¹ÄÀøÒ»Ï£¡ 2011-08-18 08:37:47
| The peak with lower energy at 283.65 eV is a typical chemical shift caused by Si Inductive Effects , corresponding to C¨CSi. The binding energy of lowest intensity peaks is 285.66 as a result of -I effect of O or N, which can be inferred as C¨CO or C¨CN. |

2Â¥2011-08-16 22:38:08
Carena
Ìú¸Ëľ³æ (ÖªÃû×÷¼Ò)
- ·ÒëEPI: 94
- Ó¦Öú: 5 (Ó×¶ùÔ°)
- ¹ó±ö: 0.542
- ½ð±Ò: 6371.2
- É¢½ð: 8657
- ºì»¨: 55
- ɳ·¢: 23
- Ìû×Ó: 5968
- ÔÚÏß: 357.5Сʱ
- ³æºÅ: 1049282
- ×¢²á: 2010-06-29
- ÐÔ±ð: MM
- רҵ: Íâ¹úÓïÑÔ
¡ï
8814402(½ð±Ò+1): »¶ÓÌÖÂÛ 2011-08-18 19:06:47
8814402(½ð±Ò+1): »¶ÓÌÖÂÛ 2011-08-18 19:06:47
| The peak with lower energy at 283.65 eV is a typical chemical shift caused by Si Inductive Effects , corresponding to C¨CSi. ÕâÒ»¾äÓÐÎÊÌâÂð£¿ÎÒÉÔ΢¸ÄÁËÏÂѽ£¬Óï·¨ÊÇûÓÐÎÊÌâµÄ¡£ |

3Â¥2011-08-17 12:10:29
hongliannu
ľ³æ (СÓÐÃûÆø)
- ·ÒëEPI: 11
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 2269.2
- ºì»¨: 1
- Ìû×Ó: 85
- ÔÚÏß: 38.7Сʱ
- ³æºÅ: 897304
- ×¢²á: 2009-11-08
- ÐÔ±ð: GG
- רҵ: µç»¯Ñ§
¡¾´ð°¸¡¿Ó¦Öú»ØÌû
¡ï ¡ï
8814402(½ð±Ò+1): ¸ÐлӦÖú 2011-08-18 19:07:04
sltmac(½ð±Ò+1): »¶Ó³£À´ 2011-08-19 08:32:02
okwl(½ð±Ò+15): ллӦÖú£¡ 2011-08-19 11:30:23
8814402(½ð±Ò+1): ¸ÐлӦÖú 2011-08-18 19:07:04
sltmac(½ð±Ò+1): »¶Ó³£À´ 2011-08-19 08:32:02
okwl(½ð±Ò+15): ллӦÖú£¡ 2011-08-19 11:30:23
| The peak of 283.65 eV in lower energy are is a typical chemical shift caused by Si Inductive Effects , ascribed to C¨CSi bond. The peaks with lowest binding energy at 285.66 can be the shift lead by -I effect of O or N, which can be asceibed to C¨CO or C¨CN. |
4Â¥2011-08-18 11:42:26













»Ø¸´´ËÂ¥
5