[交流] 【求助】场发射性质：turn-on field 和field enhancement factor 已有6人参与

Originally posted by chenjin at 2010-05-06 15:10:32:
偶认为是对于一定的材料来说 开启电压越低  β越大，

[ Last edited by chenjin on 2010-5-6 at 15:17 ]

Originally posted by smoon8711 at 2010-05-06 11:31:12:
我做的ZnS纳米带的场发射性质，现在审稿意见回来了，对于场发射性质审稿人有个意见：1.  For a material with turn-on field as high as 15.3 V/um, it is impossible to have a enhancement factor as high as 2 ...

Originally posted by 残盾 at 2010-05-06 17:00:18:
我觉得在低场条件下你的数据不是FN发射机制，明显背离，
这个得讨论一下

Originally posted by smoon8711 at 2010-05-06 17:44:59:

测试条件：阴阳极间距50微米，开启电压为电流达到10 微A每cm2，真的很感谢你，我刚才查了文献：间距为200微米，开启电压3.47，field enhancement factor为2010.我的数据这么大，是不是因为我的阴阳间距太小啊！