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kevinhan1

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武汉一心一译

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kevinhan1: 金币+30, 翻译EPI+1, ★★★★★最佳答案 2016-01-06 10:16:32
2.由于DSi DM,忽略 合金元素 扩散,则按照 误差解 可求得 合金元素 为零时 的 等效解 为
  Due to DSi DM, diffusion of alloy elements can be ignored, and thus it can obtain the equivalent solution when alloy element is zero based on error solution

3.将上述解 再换算成 实际 合金元素含量 条件下的 解,即按式(1)有
  Above solutions can be converted into the solutions under the condition of practical concentration of alloy elements, i.e. according to equation (1), it can get:

4.可见界面 两侧 Si的 浓度差 与 两侧 合金元素浓度差 有关。在 实际扩散中,由于 Si的扩散 远快于 合金元素的 扩散,在刚开始的 一段时间内,界面上 维持较大 的Si 浓度差,但随着 扩散的进行,界面上 合金元素的 浓度差 将逐渐消失,从而Si 的浓度差 也随之消失。
The concentration difference of Si between both sides of interface is related to the concentration difference of alloy elements between both sides. In practical situation, the diffusion velocity of Si is much faster than that of alloy elements, moreover in the very beginning period of diffusion, the concentration difference of Si on interface is relative big, however with the proceeding of diffusion, the concentration difference of alloy elements gradually disappears, so does the concentration difference of Si.
3楼2016-01-05 21:12:01
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gutenzhang

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hi,student. i can translate english. if you need, you can touch me. my qq is 1002898840. i also can translate other languages. for example, germany, french, spain,italy,korea,thailand,indonesia,russia,etc. if you need, please touch me. thank you very much.
2楼2016-01-05 20:36:41
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