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1楼 2016-01-05 18:54:12

已阅关注TA 给TA发消息送TA红花 TA的回帖

gutenzhang

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hi,student. i can translate english. if you need, you can touch me. my qq is 1002898840. i also can translate other languages. for example, germany, french, spain,italy,korea,thailand,indonesia,russia,etc. if you need, please touch me. thank you very much.

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2楼2016-01-05 20:36:41

已阅关注TA 给TA发消息送TA红花 TA的回帖

武汉一心一译

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kevinhan1: 金币+30, 翻译EPI+1, ★★★★★最佳答案 2016-01-06 10:16:32

2.由于DSi DM，忽略合金元素扩散，则按照误差解可求得合金元素为零时的等效解为
Due to DSi DM, diffusion of alloy elements can be ignored, and thus it can obtain the equivalent solution when alloy element is zero based on error solution

3.将上述解再换算成实际合金元素含量条件下的解，即按式（1）有
Above solutions can be converted into the solutions under the condition of practical concentration of alloy elements, i.e. according to equation (1), it can get:

4.可见界面两侧 Si的浓度差与两侧合金元素浓度差有关。在实际扩散中，由于 Si的扩散远快于合金元素的扩散，在刚开始的一段时间内，界面上维持较大的Si 浓度差，但随着扩散的进行，界面上合金元素的浓度差将逐渐消失，从而Si 的浓度差也随之消失。
The concentration difference of Si between both sides of interface is related to the concentration difference of alloy elements between both sides. In practical situation, the diffusion velocity of Si is much faster than that of alloy elements, moreover in the very beginning period of diffusion, the concentration difference of Si on interface is relative big, however with the proceeding of diffusion, the concentration difference of alloy elements gradually disappears, so does the concentration difference of Si.

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3楼2016-01-05 21:12:01

已阅关注TA 给TA发消息送TA红花 TA的回帖

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