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vanhalen76金虫 (正式写手)
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[求助]
急求助翻译摘要 汉译英！！！！【有效时间2008年9月21号】
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为了降低大直径硅单晶生长过程中氧、碳的引入，对18英寸热系统进行改造，设计了改进型热系统，改变Ar的流向、加热器的尺寸，降低了硅单晶重的氧、碳含量，拉制晶体时间缩短，消耗功率降低，晶体质量提高。 谢谢大家 ！ [ Last edited by zzgyb on 2009-4-22 at 16:26 ] |
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sibianjing
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In order to reduce the absorbation of the carbon/oxygen during the large-diameter silicon crystal growth process,an improvement was design to reform the 18 inches heat system ,change the flow of Ar, the heater size, a better result was obtained :the oxygen, Carbon contentwere lower and the time of drawn crystal , the consumption of power were shorted . the quality of the crystal was improved . Thank you |
6楼2008-09-20 18:53:31
kaiyuxing
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2楼2008-09-19 22:36:33
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vanhalen76(金币+1,VIP+0):xiexie
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| In order to reduce the oxygen, carbon in the growth process of the large-diameter silicon crystal. The introduction of 18 inches on the heat system reform, improved thermal design of the system and change the flow of Ar, the heater size, reduced weight of the silicon oxygen, Carbon content, drawn crystal time, lower power consumption, improve the quality of the crystal. |
3楼2008-09-20 00:10:46
nucleus01
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vanhalen76(金币+1,VIP+0):xiexie
vanhalen76(金币+1,VIP+0):xiexie
vanhalen76(金币+1,VIP+0):xiexie
vanhalen76(金币+1,VIP+0):xiexie
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In order to reduce incorporation of oxygen/carbon in large diameter silicon monocrystal during growth process, a technical transformation was implemented onto the 18 inches system. An improved heat system was designed to change flow direction of Argon and size of heater. It is as a result that lower content of oxygen/carbon in silicon monocrystal , shorter time of pulling crystal, lower power consumption and crystal quality improvement. [ Last edited by nucleus01 on 2008-9-20 at 01:08 ] |
4楼2008-09-20 01:07:05
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