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kaiyuxing

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vanhalen76(½ð±Ò+1,VIP+0):xiexie
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2Â¥2008-09-19 22:36:33
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emma749

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vanhalen76(½ð±Ò+1,VIP+0):xiexie
In order to reduce the oxygen, carbon  in the growth process of the large-diameter silicon crystal. The introduction of 18 inches on the heat system reform, improved thermal design of the system and change the flow of Ar, the heater size, reduced weight of the silicon oxygen, Carbon content, drawn crystal time, lower power consumption, improve the quality of the crystal.
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3Â¥2008-09-20 00:10:46
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nucleus01

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vanhalen76(½ð±Ò+1,VIP+0):xiexie
vanhalen76(½ð±Ò+1,VIP+0):xiexie
In order to reduce  incorporation of oxygen/carbon in  large diameter silicon monocrystal during  growth process,  a  technical transformation  was implemented onto the 18 inches system.  An improved heat system was designed to change flow direction of Argon and  size of heater.  It is as a result that lower content of  oxygen/carbon  in silicon monocrystal , shorter time of pulling crystal, lower power consumption  and  crystal quality improvement.

[ Last edited by nucleus01 on 2008-9-20 at 01:08 ]
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4Â¥2008-09-20 01:07:05
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xuancj

ľ³æ (ÕýʽдÊÖ)

In order to reduce the large-diameter silicon crystal growth process, oxygen, carbon The introduction of 18 inches on the heat system reform, improved thermal design of the system and change the flow of Ar, the heater size, reduced weight of the silicon oxygen, Carbon content, drawn crystal time, lower power consumption, improve the quality of the crystal.
Thank you!
5Â¥2008-09-20 02:42:30
ÒÑÔÄ   »Ø¸´´ËÂ¥   ¹Ø×¢TA ¸øTA·¢ÏûÏ¢ ËÍTAºì»¨ TAµÄ»ØÌû

sibianjing

ľ³æ (ÕýʽдÊÖ)

In order to reduce the absorbation of the carbon/oxygen during the large-diameter silicon crystal growth process,an improvement was design to reform the 18 inches  heat system ,change the flow of Ar, the heater size, a better result was obtained :the oxygen, Carbon contentwere lower and the time of drawn crystal , the consumption of  power were shorted .  the quality of the crystal was improved .

Thank you
6Â¥2008-09-20 18:53:31
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