【答案】应助回帖
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感谢参与，应助指数 +1
陈日飞: 金币+45, ★★★★★最佳答案, 非常好，非常感谢 2015-09-20 23:14:38
lazy锦溪: LS-EPI+1, 感谢应助！ 2015-09-21 12:41:33
1.EPO检索 “gan systems”
6个专利，分别为：
"FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" US2015162252 (A1)
"FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" WO2015061881 (A1)
"DEVICES AND SYSTEMS COMPRISING DRIVERS FOR POWER CONVERSION CIRCUITS" WO2014094115 (A1)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" KR20130088743 (A)
"Gallium nitride power devices using island topography" TW201234538 (A)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" US9064947 (B2); US2012138950 (A1)
2、检索同族专利
WO2015061881 (A1)同族专利：
"FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" WO2015061881 (A1)
"Island matrixed gallium nitride microwave and power switching transistors" AU2010281317 (A1)
"High density gallium nitride devices using island topology" AU2011241423 (A1)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" CA2769940 (A1)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" CA2796155 (A1); CA2796155 (C)
"High density gallium nitride devices using island topology" CN102893392 (A); CN102893392 (B)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" EP2465141 (A1)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" EP2559064 (A1)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" JP2013501362 (A)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" JP2013528930 (A)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" KR20120041237 (A)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" KR20130088743 (A)
"Gallium nitride power devices using island topography" TW201234538 (A)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" US2013049010 (A1); US8791508 (B2)
"Gallium Nitride Power Devices Using Island Topography" US2011186858 (A1); US9029866 (B2)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" US9064947 (B2); US2012138950 (A1)
"FAULT TOLERANT DESIGN FOR LARGE AREA NITRIDE SEMICONDUCTOR DEVICES" US2015162252 (A1)
"ISLAND MATRIXED GALLIUM NITRIDE MICROWAVE AND POWER SWITCHING TRANSISTORS" WO2011014951 (A1)
"HIGH DENSITY GALLIUM NITRIDE DEVICES USING ISLAND TOPOLOGY" WO2011127568 (A1); WO2011127568 (A4)
"GALLIUM NITRIDE POWER DEVICES USING ISLAND TOPOGRAPHY" WO2012103633 (A1)
3.用发明人检索
自行去epo检索吧 |
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