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huoxiaodi: 金币+50, 翻译EPI+1, ★★★★★最佳答案 2015-06-29 13:37:06
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为了改善 过孔的 干法刻蚀 中 刻蚀率的 不同 导致 SD线和P-Si 接触面积不一致 的问题，同时 解决 ELA工艺 导致 P-Si 表面突起 而 造成SD与P-Si 点状接触 的问题，探究了 过孔的 不同干法刻蚀工艺 对TFT-LCD 性能的影响，从中 找出 最佳的 过孔干法刻蚀工艺。
In order to overcome the inconsistent contact area between SD line and P-Si caused by the difference of etching rate in via hole dry etching technology, as well as to solve the point contact between SD line and P-Si made by P-Si surface convex during the ELA process, we explored the influence of various via hold dry etching technology upon the property of TFT-LCD, so as to find the optimal various via hold dry etching technology.
利用 京东方产 线设备制备了 两种不同的 LTPS阵列 样品，样品一 的过孔工艺 采用 传统的 底部接触方式，样品二 采用 新的 侧面 接触方式,样品一和样品二 其余的 工艺过程一致。
Two different samples of LTPS array were prepared by using BOE production line equipment, wherein the sample 1 was prepared by adopting conventional Just Contact Method, while the sample 2 was prepared by adopting a new type of Side Contact Method. Besides the differences of contacting methods, there is no other differences of technological processes during making these two samples.
实验结果表明：多点 的U-I曲线 由 发散变为集聚，电子迁移率 有所提高；SEM数据 表明 采用侧面接触方式 能够 完全 将P-Si刻穿。
The experimental results show that the multipoint U-I curve changes from a divergent curve to a concentration curve, and electron mobility increases in some degree; In addition, the SEM data show that the P-Si can be cut through completely by Side Contact Method.
结论：采用 侧面接触方式 能够 明显的 解决 干法刻蚀 中刻蚀率 的不同 导致 SD线和P-Si接触面积 不一致 的问题，同时 避免了 ELA工艺 导致 P-Si表面突起 而造成SD与P-Si 点状接触的 问题，电学性 能有所改善，同时 减少了 工艺时间，提高了 产能。
Conclusion: Side Contact Method is able to overcome the inconsistent contact area between SD line and P-Si caused by the difference of etching rate of via hole dry etching technology, as well as to solve the point contact between SD line and P-Si made by P-Si surface convex during the ELA process,so that the TFT-LCD electrical performance can be improved. In addition the Side Contact Method can reduce the process time, and improve the productivity. |
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