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huoxiaodi金虫 (小有名气)
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[求助]
请求帮我润色一下我翻译的英文，不要求非得直译。
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汉语： 为了改善过孔的干法刻蚀中刻蚀率的不同导致SD线和P-Si接触面积不一致的问题，同时解决ELA工艺导致P-Si表面突起而造成SD与P-Si点状接触的问题，探究了过孔的不同干法刻蚀工艺对TFT-LCD性能的影响，从中找出最佳的过孔干法刻蚀工艺。利用京东方产线设备制备了两种不同的LTPS阵列样品，样品一的过孔工艺采用传统的底部接触方式，样品二采用新的侧面接触方式,样品一和样品二其余的工艺过程一致。实验结果表明：多点的U-I曲线由发散变为集聚，电子迁移率有所提高；SEM数据表明采用侧面接触方式能够完全将P-Si刻穿。结论：采用侧面接触方式能够明显的解决干法刻蚀中刻蚀率的不同导致SD线和P-Si接触面积不一致的问题，同时避免了ELA工艺导致P-Si表面突起而造成SD与P-Si点状接触的问题，电学性能有所改善，同时减少了工艺时间，提高了产能。 我翻译的英文： In order to improve the difference of contact hole dry etching rate lead to SD line and P-Si contact area inconsistent problem, at the same time solve the SD and P-Si point contact problem caused by the ELA process leading to protrusion of P-Si surface, exploring the effect for the performance of TFT-LCD by the via different dry etching process could find the best via dry etching process. Two different samples of LTPS array was prepared by using BOE production line equipment, the contact hole process of sample 1 using the process traditional way (Just Contact Method), sample 2 using the new way (Side Contact Method). The rest of sample 1 and sample 2 process is same. The experimental results show that the many points U-I curve change from divergence to gather, electron mobility increase. SEM data show that the P-Si can be cut through completely by Side Contact Method. Conclusion: Side Contact Method is able to solve SD line and P-Si contact area inconsistent problem due to difference of contact hole etching rate, at the same time avoid the SD and P-Si point contact problem caused by the ELA process leading to P-Si surface protrusion. The TFT-LCD electrical performance is improved. And the Side Contact Method can reduce the process time, improve the capacity. 求大神润色以下我的英文翻译。 |
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