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题目：Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP DOI：10.1007/s11801-014-4082-y 杂志：Optoelectronics Letters Volume 10, Issue 4 , pp 269-272 |
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6楼2015-06-11 22:24:46
fatewu
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2楼2015-06-11 19:40:11
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楼上那位坑人了 @fatewuAccession number: 20145200368147 Title: Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP Authors: Liu, Xia1, 2 Email author liuxia@wfu.edu.cn; Cao, Lian-zhen1, 2; Song, Hang2; Jiang, Hong2 Author affiliation: 1 Department of Physics and Electronic Science, Weifang University, Weifang, China 2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China Corresponding author: Liu, Xia Source title: Optoelectronics Letters Abbreviated source title: Optoelectron. Lett. Volume: 10 Issue: 4 Issue date: July 8, 2014 Publication year: 2014 Pages: 269-272 Language: English ISSN: 16731905 Document type: Journal article (JA) Publisher: Springer Verlag Abstract: InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4 epilayers. Number of references: 19 Main heading: Growth temperature Controlled terms: Crystalline materials - Epilayers - Metallorganic chemical vapor deposition - Organic chemicals - Organometallics - Scanning electron microscopy - Semiconductor quantum wells Uncontrolled terms: Crystalline quality - Epilayers grown - Hall measurements - Metal organic - Optimum growth temperature - Photoluminescence spectrum - Raman properties - Raman scattering spectra Classification code: 712.1 Semiconducting Materials - 741.1 Light/Optics - 802.2 Chemical Reactions - 804.1 Organic Compounds - 933.1 Crystalline Solids DOI: 10.1007/s11801-014-4082-y Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. |
3楼2015-06-11 19:55:19
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4楼2015-06-11 22:23:23
