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飞雪满天

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[求助] 文章是否被EI检索

题目：Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP
DOI：10.1007/s11801-014-4082-y
杂志：Optoelectronics Letters   Volume 10, Issue 4 , pp 269-272
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1楼 2015-06-11 19:31:00
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2楼2015-06-11 19:40:11
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飞雪满天(心静_依然代发): 金币+10, 感谢应助 2015-06-15 12:44:17
心静_依然: LS-EPI+1, 感谢应助 2015-06-15 12:44:32
楼上那位坑人了 @fatewu
Accession number:        

20145200368147
          Title:         Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP
          Authors:         Liu, Xia1, 2 Email author liuxia@wfu.edu.cn; Cao, Lian-zhen1, 2; Song, Hang2; Jiang, Hong2
          Author affiliation:         1 Department of Physics and Electronic Science, Weifang University, Weifang, China
                  2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
          Corresponding author:         Liu, Xia
          Source title:         Optoelectronics Letters
          Abbreviated source title:         Optoelectron. Lett.
          Volume:         10
          Issue:         4
          Issue date:         July 8, 2014
          Publication year:         2014
          Pages:         269-272
          Language:         English
          ISSN:         16731905
          Document type:         Journal article (JA)
          Publisher:         Springer Verlag
          Abstract:         InAs0.6P0.4 epilayers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP (100) substrate are investigated. The influence of growth temperature on crystalline quality of InAs0.6P0.4 epilayer is characterized by scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL) spectra, and the Raman properties are analyzed by Raman scattering spectrum. The characterization results show that the crystalline quality and Raman property of InAs0.6P0.4 epilayers have close relation to the growth temperature. It indicates that 530 °C is the optimum growth temperature to get good quality and properties of InAs0.6P0.4 epilayers.
          Number of references:         19
          Main heading:         Growth temperature
          Controlled terms:         Crystalline materials  -  Epilayers  -  Metallorganic chemical vapor deposition  -  Organic chemicals  -  Organometallics  -  Scanning electron microscopy  -  Semiconductor quantum wells
          Uncontrolled terms:         Crystalline quality  -  Epilayers grown  -  Hall measurements  -  Metal organic  -  Optimum growth temperature  -  Photoluminescence spectrum  -  Raman properties  -  Raman scattering spectra
          Classification code:         712.1 Semiconducting Materials -  741.1 Light/Optics -  802.2 Chemical Reactions -  804.1 Organic Compounds -  933.1 Crystalline Solids
          DOI:         10.1007/s11801-014-4082-y
          Database:         Compendex
                  Compilation and indexing terms, © 2015 Elsevier Inc.
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3楼2015-06-11 19:55:19
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tangcwk

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引用回帖:
3楼: Originally posted by Paulwolf at 2015-06-11 19:55:19
楼上那位坑人了 fatewu
Accession number:        

20145200368147
          Title:         Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP
          Authors:         Liu, Xia1, 2 E ...

吃一堑长一智啊   检索时候不要加   InAs0.6P0.4/InP   
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需要书籍的请自行发帖求助，金币够了，我自然会应助，请不要站内信索要书籍密码，我不会给你的。没有看到这些字直接要密码的都眼瞎
4楼2015-06-11 22:23:23
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Paulwolf

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引用回帖:
4楼: Originally posted by tangcwk at 2015-06-11 22:23:23
吃一堑长一智啊   检索时候不要加   InAs0.6P0.4/InP   ...

你怎么这么机智，知道我没加
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5楼2015-06-11 22:24:29
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tangcwk

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引用回帖:
5楼: Originally posted by Paulwolf at 2015-06-11 22:24:29
你怎么这么机智，知道我没加...

6楼2015-06-11 22:24:46
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