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Semiconductor Lasers I Fundamentals SERIES EDITORS PAUL L. KELLEY Tufts University Medford, Massachusetts IVAN P. KAMINOW AT& T Bell Laboratories Holmdel, New Jersey GOVIND P. AGRAWAL University of Rochester Rochester, New York CONTRIBUTORS Alfred Adams G. H. John E. Bowers I. Heitmann J. Inoue Eli Kapon F. Matinaga Radhakrishnan Nagarajan Eoin P. O'Reilly Mark Silver Amnon Yariv Y. Yumamoto Bin Zhao ACADEMIC PRESS chapter 1：quantum well semiconductor laser 1.1 1.2 1.3 1.4 1.5 1.6 Quantum Well Semiconductor Lasers Introduction Carriers and photons in semiconductor structures 1.2.1 Electronic states in a semiconductor structure 1.2.2 Carrier distribution functions and induced polarization 1.2.3 Optical transitions and gain coefficients Basics of quantum well lasers 1.3.1 Transition matrix elements 1.3.2 Density of states for QW structures 1.3.3 Rate equations for quantum well laser structures 1.3.4 General description of statics and dynamics State filling in quantum well lasers 1.4.1 Gain spectrum and sublinear gain relationship 1.4.2 State filling on threshold current 1.4.3 A puzzle in high-speed modulation of QW lasers 1.4.4 State filling on differential gain of QW lasers 1.4.5 State filling on spectral dynamics Reduction of state filling in QW lasers 1.5.1 Multiple quantum well structures 1.5.2 Quantum well barrier height 1.5.3 Separate confinement structures 1.5.4 Strained quantum well structures 1.5.5 Substrate orientation 1.5.6 Bandgap offset at QW heterojunctions Some performance characteristics of QW lasers 1.6.1 Submilliampere threshold current 1.6.2 High-speed modulation at low operation current 1.6.3 Amplitude-phase coupling and spectral linewidth 1.6.4 Wavelength tunability and switching chapter 2：strained quantum well laser chapter 3：high speed laser chapter 4：quantum wires and quantum dots laser chapter 5：quantum optics effects in semiconductor laser chapter 6：index 半导体激光器经典外文教材 |
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2014-10-01 15:05:08, 23.35 M
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