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Manipulation of Charge Transfer Across Semiconductor Interface. ÒÑÓÐ4È˲ÎÓë
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Manipulation of Charge Transfer Across Semiconductor Interface. A Criterion That Cannot Be Ignored in Photocatalyst Design J. Phys. Chem. Lett. 2012, 3, 663−672 ABSTRACT: The Perspective focuses on photoinduced electron transfer between semiconductor−metal and semiconductor−semiconductor nanostructures and factors that influence the rate of electron transfer at the interface. The storage and discharge properties of metal nanoparticles play an important role in dictating the photocatalytic performance of semiconductor−metal composite assemblies. Both electron and hole transfer across the interface with comparable rates are important in maintaining high photocatalytic efficiency and stability of the semiconductor assemblies. Coupled semiconductors of well-matched band energies are convenient to improve charge separation. Furthermore, semiconductor and metal nanoparticles assembled on reduced graphene oxide sheets offer new ways to design multifunctional catalyst mat. The fundamental understanding of charge-transfer processes is important in the future design of light-harvesting assemblies. ¹ØÓÚÔö¼Ó°ëµ¼ÌåµçºÉÓë¿ÕѨ·ÖÀëµÄ¼¸ÖÖ·½·¨¡£¡£¡£¡£¡£¡£¡£ÊÇһƪºÜºÃµÄ×ÛÊö¡£¡£¡£ [ Last edited by hycha520 on 2012-6-30 at 08:06 ] |
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3Â¥2012-06-29 21:06:37
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