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ÖÁ×ðľ³æ (ÖªÃû×÷¼Ò)
Translator and Proofreader
- ·ÒëEPI: 1690
- Ó¦Öú: 452 (˶ʿ)
- ½ð±Ò: 31580.9
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5Â¥2014-08-06 11:37:32
ssssllllnnnn
ÖÁ×ðľ³æ (ÖªÃû×÷¼Ò)
Translator and Proofreader
- ·ÒëEPI: 1690
- Ó¦Öú: 452 (˶ʿ)
- ½ð±Ò: 31580.9
- ºì»¨: 100
- Ìû×Ó: 7681
- ÔÚÏß: 19966.6Сʱ
- ³æºÅ: 3328089
- ×¢²á: 2014-07-17
- רҵ: Ö×Áö·¢Éú
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ÕæÇ¿±ØÊ¤: ½ð±Ò+2, лл 2014-08-06 08:18:37
hongyangb: ½ð±Ò+15, ·ÒëEPI+1, ¡ï¡ï¡ïºÜÓаïÖú, ·Ç³£¸Ðл£¬Ó¢ÓïºÃ¾ÍÊǰ²ÒÝ 2014-08-06 12:35:09
ÕæÇ¿±ØÊ¤: ½ð±Ò+2, лл 2014-08-06 08:18:37
hongyangb: ½ð±Ò+15, ·ÒëEPI+1, ¡ï¡ï¡ïºÜÓаïÖú, ·Ç³£¸Ðл£¬Ó¢ÓïºÃ¾ÍÊǰ²ÒÝ 2014-08-06 12:35:09
| Abstract: Bismuth ferrite is the only multiferroic material at room temperature found so far, and therefore has broad application prospects. However, the practical application of bismuth ferrite thin films is largely limited due to such issues as high leakage current and weak magnetic coupling. Doping is a common means of improving the bismuth ferrite thin film properties. This paper reviews the progress in electrical properties of bismuth ferrite thin films doped related works in recent years and raises some urgent questions that need to be answered promptly. |
2Â¥2014-08-06 06:18:52
ssssllllnnnn
ÖÁ×ðľ³æ (ÖªÃû×÷¼Ò)
Translator and Proofreader
- ·ÒëEPI: 1690
- Ó¦Öú: 452 (˶ʿ)
- ½ð±Ò: 31580.9
- ºì»¨: 100
- Ìû×Ó: 7681
- ÔÚÏß: 19966.6Сʱ
- ³æºÅ: 3328089
- ×¢²á: 2014-07-17
- רҵ: Ö×Áö·¢Éú
3Â¥2014-08-06 06:21:04
asheng007586
гæ (³õÈëÎÄ̳)
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- ×¢²á: 2014-06-04
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4Â¥2014-08-06 11:32:18














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